The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field

2000 ◽  
Vol 210 (4) ◽  
pp. 532-540 ◽  
Author(s):  
Norihisa Machida ◽  
Keigo Hoshikawa ◽  
Yasuo Shimizu
Keyword(s):  
Magnetic Field ◽  
Single Crystals ◽  
Oxygen Concentration ◽  
Flow Rate ◽  
Gas Flow ◽  
Transverse Magnetic ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Czochralski Silicon ◽  
Furnace Pressure

The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals

1998 ◽  
Vol 186 (3) ◽  
pp. 362-368 ◽  
Author(s):  
Norihisa Machida ◽  
Youji Suzuki ◽  
Keisei Abe ◽  
Naoki Ono ◽  
Michio Kida ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Silicon Crystals ◽  
Furnace Pressure

scholarly journals Numerical simulation of the oxygen distribution in silicon melt for different argon gas flow rates during Czochralski silicon crystal growth process

2018 ◽  
Vol 204 ◽  
pp. 05013
Author(s):  
Zumrotul Ida ◽  
Jyh-Chen Chen ◽  
Thi Hoai Thu Nguyen
Keyword(s):  
Flow Pattern ◽  
Oxygen Concentration ◽  
Flow Rate ◽  
Growth Process ◽  
Gas Flow ◽  
Silicon Crystal ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Argon Gas ◽  
Flow Motion

The effects of argon gas flow rate on the oxygen concentration in Czochralski (CZ) grown silicon crystal were examined. To analyze the influence of the argon gas flow rate in CZ growth process, a 200 mm length silicon single crystal was grown. Different argon gas flow rates are considered. The melt flow pattern, temperature and oxygen concentration distributions in the melt and crystal-melt interface are calculated. The results show that the transport of oxygen impurity is quite dependent on the flow motion in the melt. As the argon gas flow rate increases, there is no fundamental change in flow motion of the melt and the oxygen concentration decreases to a minimum value. When the argon gas flow rate increases further, the flow pattern under the melt-crystal interface starting changes and the oxygen concentration has increased after. Therefore, there is an optimum value for the argon gas flow rate for obtaining the lowest oxygen concentration in the melt.

scholarly journals Effects of argon gas flow rate on laser-welding

2012 ◽  
Vol 31 (2) ◽  
pp. 316-326 ◽  
Author(s):  
Yasuko TAKAYAMA ◽  
Rie NOMOTO ◽  
Hiroyuki NAKAJIMA ◽  
Chikahiro OHKUBO
Keyword(s):  
Laser Welding ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Argon Gas

scholarly journals Effects of Gas Flow on Spectral Properties of Plasma Jet Induced by Microwave

2018 ◽  
Vol 15 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Flow Rate ◽  
Applied Voltage ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Jet ◽  
Gas Temperature ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Jet Length ◽  
Maximum Value

In this paper, a construction microwave induced plasma jet(MIPJ) system was used to produce a non-thermal plasma jet at atmospheric pressure, at standard frequency of 2.45 GHz and microwave power of 800 W. The working gas Argon (Ar) was supplied to flow through the torch with adjustable flow rate using flow meter regulator. The influence of the MIPJ parameters such as applied voltage and argon gas flow rate on macroscopic microwave plasma parameters were studied. The macroscopic parameters results show increasing of microwave plasma jet length with increasing of applied voltage, argon gas flow rate where the plasma jet length exceed 12 cm as maximum value. While the increasing of argon gas flow rate will cause increasing into the argon gas temperature, where argon gas temperature the exceed 350 ? as maximum value and study the effect of gas flow rate on the optical properties

Morphological and optical properties of graphene film synthesized from waste of industrial cooking oil, AYAMAS using DTCVD method

2020 ◽  
Vol 14 (2) ◽  
pp. 24
Author(s):  
Nurfazianawatie Mohd Zin
Keyword(s):  
Optical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Graphene Film ◽  
Nickel Surface ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
X Ray ◽  
Cooking Oil ◽  
Vis Spectroscopy

The synthesis of graphene by double thermal chemical vapor deposition (DTCVD) using waste of industrial cooking oil (WICO) as a natural carbon source was investigated. The synthesis parameter (Argon gas flow rate) was varied between 50sccm to 300sccm by 50sccm increments. The function of Argon gas is to provide ambient condition, remove the atmospheric air from the tube and could improve the crystallinity of graphene during synthesis. WICO (from AYAMAS food processing) was placed in the first furnace (precursor furnace) and nickel was placed in the second furnace (deposition furnace). During the synthesis, elevated quantities of carbon from the source material are separated and precipitated on the Nickel surface. The sample were characterized by using Field Emission Scanning Electron Microscopy (FESEM), X-Ray Diffraction (XRD), Energy Dispersive X-ray (EDX), and Ultraviolet Visible (UV-Vis) spectroscopy. Based on FESEM images, at 250sccm, hexagonal graphene formation was observed. Besides, optical properties can be seen by UV-Vis and as the results show that 250sccm is the highest reflectivity value. Consequently, graphene synthesis from WICO using various Argon gas flow rate as precursor is successfully demonstrated.

scholarly journals Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

2014 ◽  
Author(s):  
Nordin Sabli ◽  
Zainal Abidin Talib ◽  
Wan Mahmood Mat Yunus ◽  
Zulkarnain Zainal ◽  
Hikmat S. Hilal ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Vacuum Evaporation ◽  
Gas Flow Rate ◽  
Thermal Vacuum ◽  
Argon Gas
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