Theoretical and experimental study of (Ga1-xFex)2O3 ternary alloys

1995 ◽

Vol 53 ◽

pp. 636-637

Author(s):

Norio Baba ◽

Norihiko Ichise ◽

Syunya Watanabe

Keyword(s):

Experimental Study ◽

Spherical Aberration ◽

Incident Beam ◽

Optical Parameters ◽

Beam Tilting ◽

Illumination Method ◽

Restoration Method ◽

Illumination Mode

The tilted beam illumination method is used to improve the resolution comparing with the axial illumination mode. Using this advantage, a restoration method of several tilted beam images covering the full azimuthal range was proposed by Saxton, and experimentally examined. To make this technique more reliable it seems that some practical problems still remain. In this report the restoration was attempted and the problems were considered. In our study, four problems were pointed out for the experiment of the restoration. (1) Accurate beam tilt adjustment to fit the incident beam to the coma-free axis for the symmetrical beam tilting over the full azimuthal range. (2) Accurate measurements of the optical parameters which are necessary to design the restoration filter. Even if the spherical aberration coefficient Cs is known with accuracy and the axial astigmatism is sufficiently compensated, at least the defocus value must be measured. (3) Accurate alignment of the tilt-azimuth series images.

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Diffraction from arrays of antiphase boundaries in ordered III-V alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126378 ◽

1987 ◽

Vol 45 ◽

pp. 312-313

Author(s):

T. S. Kuan

Keyword(s):

High Surface ◽

Growth Conditions ◽

Ternary Alloys ◽

Local Growth ◽

Antiphase Boundaries ◽

Surface Mobility ◽

Ordered Phases ◽

Diffraction Patterns ◽

Atomically Flat ◽

Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

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In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100167391 ◽

1996 ◽

Vol 54 ◽

pp. 986-987

Author(s):

S. Hagège ◽

U. Dahmen ◽

E. Johnson ◽

A. Johansen ◽

V.S. Tuboltsev

Keyword(s):

Electron Microscope ◽

Melt Spinning ◽

Ternary Alloys ◽

Solid Matrix ◽

Eutectic System ◽

In Situ Tem ◽

In Situ Observation ◽

Orientation Relationships ◽

Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

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Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100178732 ◽

1990 ◽

Vol 48 (4) ◽

pp. 1120-1120

Author(s):

R. Haswell ◽

U. Bangert ◽

P. Charsley

Keyword(s):

Plastic Deformation ◽

Electron Microscope ◽

Room Temperature ◽

Stacking Faults ◽

The Other ◽

Ternary Alloys ◽

Dislocation Mobility ◽

Semiconducting Materials ◽

Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

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