Relaxation analysis of NCAs in high-voltage region and effect of cobalt content

2020 ◽  
Vol 878 ◽  
pp. 114566
Author(s):  
Jian Kang ◽  
Shigeomi Takai ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao
Keyword(s):  
High Voltage ◽  
Cobalt Content ◽  
Relaxation Analysis ◽  
Voltage Region ◽  
High Voltage Region

scholarly journals Structural elucidation of the degradation mechanism of nickel-rich layered cathodes during high-voltage cycling

2020 ◽  
Vol 56 (36) ◽  
pp. 4886-4889 ◽  
Author(s):  
Jing Lai ◽  
Jun Zhang ◽  
Zuowei Li ◽  
Yao Xiao ◽  
Weibo Hua ◽  
...  
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
High Voltage ◽  
Degradation Mechanism ◽  
Structural Elucidation ◽  
Synchrotron Radiation Diffraction ◽  
Voltage Region ◽  
High Voltage Region ◽  
Layered Cathodes

A splitting of two O3 phases, rather than the often observed O1 phases in the conventional LiCoO2 electrode, was discovered in the LiNi0.85Co0.10Mn0.05O2 at high-voltage region (>4.6 V) by in situ high-resolution synchrotron radiation diffraction.

Inverse switching phenomenon of surface-stabilized ferroelectric liquid crystals under a high voltage region

1998 ◽  
Vol 215 (1) ◽  
pp. 215-220
Author(s):  
Haihua Zhang ◽  
Masao Hirano ◽  
Shunsuke Kobayashi ◽  
Yasufumi Iimura
Keyword(s):  
Liquid Crystals ◽  
High Voltage ◽  
Ferroelectric Liquid Crystals ◽  
Switching Phenomenon ◽  
Voltage Region ◽  
High Voltage Region

Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

2000 ◽  
Vol 640 ◽  
Author(s):  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Shinji Ogino ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
High Yield ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Leakage Currents ◽  
Bright Spots ◽  
Blocking Voltage ◽  
Voltage Region ◽  
The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

Conductivity Switching Behaviors in ZrO2 and YSZ Films Deposited by Pulsed Laser Depositions

2006 ◽  
Vol 306-308 ◽  
pp. 1301-1306
Author(s):  
S.H. Kim ◽  
I.S. Byun ◽  
I.R. Hwang ◽  
J.S. Choi ◽  
B.H. Park ◽  
...  
Keyword(s):  
High Voltage ◽  
Nonvolatile Memory ◽  
Low Voltage ◽  
Pulsed Laser ◽  
Si Substrates ◽  
Reset Voltage ◽  
Nonvolatile Memory Devices ◽  
Conductivity Switching ◽  
Capacitor Structure ◽  
Voltage Region

Polycrystalline ZrO2 and yttria-stablilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100 °C and an oxygen pressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low voltage region (V < 1.4 V) depending on the value of previously applied high voltage and Schottky-type conduction in the high voltage region (1.4 V < V < 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable reset voltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher Conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions.

A Molded Package Optimized for High Voltage SiC-Devices

2011 ◽  
Vol 679-680 ◽  
pp. 762-765 ◽  
Author(s):  
Karl Otto Dohnke ◽  
Wolfgang Bartsch ◽  
Reinhold Schörner ◽  
T. Van Weelden
Keyword(s):  
High Voltage ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Molding Compound ◽  
Power Cycling ◽  
Temperature Swing ◽  
Voltage Application ◽  
First Results ◽  
Voltage Region

We present first results on power cycling of 6.5 kV SiC PiN-diodes mounted into a molded package. The geometry of this lateral package was designed to fulfill the specifications of the electrical isolation and the creepage distances in the high voltage region of 6.5 kV. To evaluate the suitability of this package we used high voltage SiC PiN-diodes. The diodes were soldered onto a copper lead frame, wire bonded and covered by molding compound. The packaged diodes were characterized by electrical measurements before and during a power cycling test with a temperature swing of 90 K. These results showed long term stable behavior of the I-V characteristics of the diodes as well as the suitability of the package for high temperature and high voltage application of SiC devices.

High Voltage Electron Microscopy of Ion-Milled Dental Enamel

1974 ◽  
Vol 32 ◽  
pp. 60-61
Author(s):  
L. D. Ackerman ◽  
S. H. Y. Wei
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Third Molar ◽  
Polarized Light ◽  
Dental Enamel ◽  
Longitudinal Section ◽  
Ion Milling ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron

Mature human dental enamel has presented investigators with several difficulties in ultramicrotomy of specimens for electron microscopy due to its high degree of mineralization. This study explores the possibility of combining ion-milling and high voltage electron microscopy as a means of circumventing the problems of ultramicrotomy.A longitudinal section of an extracted human third molar was ground to a thickness of about 30 um and polarized light micrographs were taken. The specimen was attached to a single hole grid and thinned by argon-ion bombardment at 15° incidence while rotating at 15 rpm. The beam current in each of two guns was 50 μA with an accelerating voltage of 4 kV. A 20 nm carbon coating was evaporated onto the specimen to prevent an electron charge from building up during electron microscopy.

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