Effect of air annealing on the optical properties and luminescence performance of Ce:YAG ceramics for light-emitting diodes at different Ce concentrations

2021 ◽  
Author(s):  
Xiaoyun Li ◽  
Jian Chen ◽  
Zhuguang Liu ◽  
Zhonghua Deng ◽  
Qiufeng Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Luminescence Performance

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Suppression of Halide Migration and Immobile Ionic Surface Passivation for Blue Perovskite Light-Emitting Diodes

2022 ◽  
Author(s):  
Chan Beom Park ◽  
Yun Seop Shin ◽  
Yung Jin Yoon ◽  
Hyungsu Jang ◽  
Jung Geon Son ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Surface Passivation ◽  
Optoelectronic Properties ◽  
Light Emitting ◽  
Perovskite Nanocrystals

Cs-based perovskite nanocrystals (PeNCs) have been considered to be superb emitters for perovskite light-emitting diodes (PeLEDs) due to their remarkable optoelectronic properties. Still, poor optical properties are mainly attributed to...

scholarly journals Thermal influences on optical properties of light-emitting diodes: a semiempirical model

2001 ◽  
Vol 40 (4) ◽  
pp. 533 ◽  
Author(s):  
Angel García-Botella ◽  
Antonio Alvarez Fernández-Balbuena ◽  
Daniel Vázquez-Moliní ◽  
Eusebio Bernabeu
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Semiempirical Model ◽  
Light Emitting

Optical Properties of Blue-Emitting Ce[sub x]Si[sub 6−z]Al[sub z−x]O[sub z+1.5x]N[sub 8−z−x] for White Light-Emitting Diodes

2010 ◽  
Vol 157 (1) ◽  
pp. H50 ◽  
Author(s):  
Lihong Liu ◽  
Rong-Jun Xie ◽  
Naoto Hirosaki ◽  
Takashi Takeda ◽  
Chen-ning Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
White Light Emitting Diodes

Optical Properties of a NiO/Al-based Reflector for High-power Ultraviolet Light-emitting Diodes

2011 ◽  
Vol 58 (4(2)) ◽  
pp. 990-993 ◽  
Author(s):  
Dong Ju Chae ◽  
Dong Yoon Kim ◽  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Tae Geun Kim
Keyword(s):  
Optical Properties ◽  
Ultraviolet Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
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