Magnetic and structural properties of Mn5+xGe3+y thin films as a function of substrate orientation

2021 ◽  
pp. 168325
Author(s):  
R.C. Oliveira ◽  
D. Demaille ◽  
N. Casaretto ◽  
Y.J. Zheng ◽  
M. Marangolo ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Substrate Orientation

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

scholarly journals Processing and structural properties of random oriented lead lanthanum zirconate titanate thin films

2015 ◽  
Vol 61 ◽  
pp. 26-31 ◽  
Author(s):  
E.B. Araújo ◽  
B.O. Nahime ◽  
M. Melo ◽  
F. Dinelli ◽  
F. Tantussi ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Zirconate Titanate

Optical and structural properties of pulsed laser deposited Ti:Al2O3 thin films

2008 ◽  
Vol 92 (9) ◽  
pp. 1025-1029 ◽  
Author(s):  
Bo Chen ◽  
Dongfang Yang ◽  
Paul A. Charpentier ◽  
Suwas Nikumb
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Pulsed Laser

Growth and structural properties of Mg:C thin films prepared by magnetron sputtering

2010 ◽  
Vol 518 (15) ◽  
pp. 4225-4230 ◽  
Author(s):  
A.S. Ingason ◽  
A.K. Eriksson ◽  
E. Lewin ◽  
J. Jensen ◽  
S. Olafsson
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Sign in / Sign up

Export Citation Format

Share Document