Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon(a-Si1-X Cx :H) Alloy Thin Films

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

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Wide band‐gap, fairly conductivep‐type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

Applied Physics Letters ◽

10.1063/1.95655 ◽

1985 ◽

Vol 46 (3) ◽

pp. 272-274 ◽

Cited By ~ 27

Author(s):

Akira Yamada ◽

Jean Kenne ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Silicon Carbide ◽

Solar Cell ◽

Amorphous Silicon ◽

Band Gap ◽

Hydrogenated Amorphous Silicon ◽

Wide Band ◽

Wide Band Gap ◽

Direct Photolysis ◽

Solar Cell Application ◽

Hydrogenated Amorphous

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Hydrogenated amorphous silicon‐nitrogen alloys,a‐SiNx:Hy: a wide band gap material for optoelectronic devices

Journal of Applied Physics ◽

10.1063/1.360961 ◽

1996 ◽

Vol 79 (3) ◽

pp. 1730-1735 ◽

Cited By ~ 29

Author(s):

F. Demichelis ◽

G. Crovini ◽

F. Giorgis ◽

C. F. Pirri ◽

E. Tresso

Keyword(s):

Amorphous Silicon ◽

Band Gap ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Devices ◽

Wide Band ◽

Wide Band Gap ◽

Hydrogenated Amorphous

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Hydrogenated amorphous silicon-nitrogen alloys, a-Si,N:H: A candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devices

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(93)90493-h ◽

1993 ◽

Vol 164-166 ◽

pp. 67-70 ◽

Cited By ~ 7

Author(s):

M.J Williams ◽

S.M Cho ◽

S.S He ◽

G Lucovsky

Keyword(s):

Amorphous Silicon ◽

Band Gap ◽

Active Material ◽

Hydrogenated Amorphous Silicon ◽

Wide Band ◽

Wide Band Gap ◽

Hydrogenated Amorphous

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Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon

Thin Solid Films ◽

10.1016/s0040-6090(00)01633-3 ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 101-103 ◽

Cited By ~ 7

Author(s):

I. Pelant ◽

P. Fojtík ◽

K. Luterová ◽

J. Kočka ◽

K. Knížek ◽

...

Keyword(s):

Electric Field ◽

Amorphous Silicon ◽

Band Gap ◽

Room Temperature ◽

Hydrogenated Amorphous Silicon ◽

Wide Band ◽

Wide Band Gap ◽

Hydrogenated Amorphous ◽

Induced Crystallization

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Wide band‐gap hydrogenated amorphous silicon carbide prepared from a liquid aromatic carbon source

Journal of Applied Physics ◽

10.1063/1.352022 ◽

1992 ◽

Vol 72 (10) ◽

pp. 4989-4991 ◽

Cited By ~ 13

Author(s):

W. A. Nevin ◽

H. Yamagishi ◽

Y. Tawada

Keyword(s):

Silicon Carbide ◽

Carbon Source ◽

Amorphous Silicon ◽

Band Gap ◽

Hydrogenated Amorphous Silicon ◽

Wide Band ◽

Wide Band Gap ◽

Amorphous Silicon Carbide ◽

Aromatic Carbon ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

MRS Proceedings ◽

10.1557/proc-297-759 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 6

Author(s):

M.J. Williams ◽

S.M. Cho ◽

G. Lucovsky

Keyword(s):

Chemical Vapor Deposition ◽

Band Gap ◽

Vapor Deposition ◽

Active Material ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Wide Band ◽

Wide Band Gap ◽

Staebler Wronski Effect ◽

Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

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