Highly doped p-type nanocrystalline silicon thin films fabricated by low-frequency inductively coupled plasma without H2 dilution

2011 ◽  
Vol 110 (6) ◽  
pp. 063302 ◽  
Author(s):  
W. S. Yan ◽  
D. Y. Wei ◽  
S. Xu ◽  
H. P. Zhou
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Nanocrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films ◽  
P Type

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

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