Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride

2020 ◽  
Vol 544 ◽  
pp. 120186
Author(s):  
Yu. N. Novikov ◽  
V.A. Gritsenko
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Amorphous Silicon Nitride

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

scholarly journals MEMRISTOR STRUCTURES BASED ON THIN SI3N4 LAYERS AND CHARGE TRANSPORT MECHANISM RESEARCH

2020 ◽  
Author(s):  
Oleg Orlov ◽  
Andrey Gismatulin ◽  
Vladimir Gritsenko
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Resistive Switching ◽  
Transport Mechanism ◽  
Switching Effect ◽  
Charge Transport Mechanism ◽  
Resistive Memory ◽  
Mechanism Research ◽  
Experimental Researches ◽  
Switching Layer

The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect and charge transport in memristores based on silicon nitride.

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

2009 ◽  
Vol 53 (3) ◽  
pp. 251-255 ◽  
Author(s):  
A.V. Vishnyakov ◽  
Yu.N. Novikov ◽  
V.A. Gritsenko ◽  
K.A. Nasyrov
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Trap Ionization

Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride

2020 ◽  
Vol 49 (5) ◽  
pp. 372-377
Author(s):  
O. M. Orlov ◽  
A. A. Gismatulin ◽  
V. A. Gritsenko ◽  
D. S. Mizginov
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Transport Mechanism ◽  
Charge Transport Mechanism

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride
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