scholarly journals MEMRISTOR STRUCTURES BASED ON THIN SI3N4 LAYERS AND CHARGE TRANSPORT MECHANISM RESEARCH

Author(s):  
Oleg Orlov ◽  
Andrey Gismatulin ◽  
Vladimir Gritsenko

The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect and charge transport in memristores based on silicon nitride.

2009 ◽  
Vol 53 (3) ◽  
pp. 251-255 ◽  
Author(s):  
A.V. Vishnyakov ◽  
Yu.N. Novikov ◽  
V.A. Gritsenko ◽  
K.A. Nasyrov

2020 ◽  
Vol 49 (5) ◽  
pp. 372-377
Author(s):  
O. M. Orlov ◽  
A. A. Gismatulin ◽  
V. A. Gritsenko ◽  
D. S. Mizginov

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.


2009 ◽  
Vol 94 (22) ◽  
pp. 222904 ◽  
Author(s):  
Yu. N. Novikov ◽  
V. A. Gritsenko ◽  
K. A. Nasyrov

2016 ◽  
Author(s):  
Joydeep Datta ◽  
Mrinmay Das ◽  
Arka Dey ◽  
Rajkumar Jana ◽  
Partha Pratim Ray

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