MEMRISTOR STRUCTURES BASED ON THIN SI3N4 LAYERS AND CHARGE TRANSPORT MECHANISM RESEARCH
2020 ◽
Keyword(s):
The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect and charge transport in memristores based on silicon nitride.
2009 ◽
Vol 53
(3)
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pp. 251-255
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Keyword(s):
Keyword(s):
2015 ◽
Vol 39
◽
pp. 659-664
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