Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

2010 ◽  
Vol 3 (9) ◽  
pp. 091101 ◽  
Author(s):  
Jaehoon Song ◽  
Akbar I. Inamdar ◽  
ByeongUk Jang ◽  
Kiyoung Jeon ◽  
YoungSam Kim ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Switching Performance

Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

2019 ◽  
Vol 158 ◽  
pp. 28-36 ◽  
Author(s):  
Yanfei Qi ◽  
Chun Zhao ◽  
Ce Zhou Zhao ◽  
Wangying Xu ◽  
Zongjie Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Solution Processed ◽  
Switching Performance ◽  
Temperature Solution

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

2021 ◽  
Vol 12 (7) ◽  
pp. 1973-1978
Author(s):  
Fanju Zeng ◽  
Yongqian Tan ◽  
Wei Hu ◽  
Xiaosheng Tang ◽  
Zhongtao Luo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Hydroiodic Acid ◽  
Switching Performance

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

scholarly journals Size-controlled resistive switching performance and regulation mechanism of SnO2 QDs

2021 ◽  
Vol 70 (19) ◽  
pp. 197301
Author(s):  
Shao-Kang Gong ◽  
Jing Zhou ◽  
Zhi-Qing Wang ◽  
Mao-Cong Zhu ◽  
Jie Shen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Regulation Mechanism ◽  
Switching Performance ◽  
Size Controlled

Transient Current of Resistive Switching of a NiO$_{x}$ Resistive Memory

2012 ◽  
Vol 51 ◽  
pp. 041101 ◽  
Author(s):  
Chih-Yi Liu ◽  
Jen-Yen Ho ◽  
Jyun-Jie Huang ◽  
Hung-Yu Wang
Keyword(s):  
Resistive Switching ◽  
Transient Current ◽  
Resistive Memory

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

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