Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers

2021 ◽  
Author(s):  
Zongjie Shen ◽  
Chun Zhao ◽  
Ivona Z Mitrovic ◽  
Cezhou Zhao ◽  
Yina Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
2D Materials ◽  
Solution Processed ◽  
Switching Performance

Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

2019 ◽  
Vol 158 ◽  
pp. 28-36 ◽  
Author(s):  
Yanfei Qi ◽  
Chun Zhao ◽  
Ce Zhou Zhao ◽  
Wangying Xu ◽  
Zongjie Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Solution Processed ◽  
Switching Performance ◽  
Temperature Solution

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Solution Processed

Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

2021 ◽  
Vol 12 (7) ◽  
pp. 1973-1978
Author(s):  
Fanju Zeng ◽  
Yongqian Tan ◽  
Wei Hu ◽  
Xiaosheng Tang ◽  
Zhongtao Luo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Hydroiodic Acid ◽  
Switching Performance

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

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