In-situ secondary annealing treatment assisted effective surface passivation of shallow defects for efficient perovskite solar cells

2021 ◽  
Vol 492 ◽  
pp. 229621
Author(s):  
Yawei Miao ◽  
Mengmeng Zheng ◽  
Haoxin Wang ◽  
Cheng Chen ◽  
Xingdong Ding ◽  
...  
Small ◽  
2020 ◽  
Vol 16 (49) ◽  
pp. 2005022 ◽  
Author(s):  
Md Arafat Mahmud ◽  
The Duong ◽  
Yanting Yin ◽  
Jun Peng ◽  
Yiliang Wu ◽  
...  

2020 ◽  
Vol 8 (17) ◽  
pp. 8313-8322 ◽  
Author(s):  
Xin Wu ◽  
Lu Zhang ◽  
Zhuo Xu ◽  
Selina Olthof ◽  
Xiaodong Ren ◽  
...  

This work reports an effective surface passivation strategy using the multifunctional organic ionic compound 1-ethylpyridinium chloride in combination with (FAPbI3)0.95(MAPbBr3)0.05.


Author(s):  
Jiahui Li ◽  
Fei Gao ◽  
Jialun Wen ◽  
Zhuo Xu ◽  
Chaoqun Zhang ◽  
...  

There are a large number of ionic defects on the surface and grain boundaries of perovskite films, which are detrimental to the performance of perovskite solar cells (PSCs). Passivating these...


2021 ◽  
pp. 2248-2255
Author(s):  
Agustín Bou ◽  
Haralds A̅boliņš ◽  
Arjun Ashoka ◽  
Héctor Cruanyes ◽  
Antonio Guerrero ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


Nano Letters ◽  
2016 ◽  
Vol 16 (11) ◽  
pp. 7013-7018 ◽  
Author(s):  
Quentin Jeangros ◽  
Martial Duchamp ◽  
Jérémie Werner ◽  
Maximilian Kruth ◽  
Rafal E. Dunin-Borkowski ◽  
...  

2016 ◽  
Vol 8 (5) ◽  
pp. 1-7 ◽  
Author(s):  
Ming Xu ◽  
Jing Feng ◽  
Xia-Li Ou ◽  
Zhen-Yu Zhang ◽  
Yi-Fan Zhang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.


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