Effect of oxygen vacancies on structural, electrical and magnetic properties of La0.67Sr0.33CoO3 thin films

2016 ◽  
Vol 89 ◽  
pp. 715-720 ◽  
Author(s):  
Bin Liu ◽  
Guiju Liu ◽  
Honglei Feng ◽  
Chao Wang ◽  
Huaiwen Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Oxygen Vacancies ◽  
Electrical And Magnetic Properties ◽  
Effect Of Oxygen

Structural, electrical, and magnetic properties of Ba0.9Ca0.1Ti0.97Fe0.03O3 and the effect of oxygen vacancies

2013 ◽  
Vol 114 (22) ◽  
pp. 223911 ◽  
Author(s):  
Tanushree Chakraborty ◽  
Carlo Meneghini ◽  
Giuliana Aquilanti ◽  
Sugata Ray
Keyword(s):  
Magnetic Properties ◽  
Oxygen Vacancies ◽  
Electrical And Magnetic Properties ◽  
Effect Of Oxygen

Percolation Effects in the Mechanical Properties of Granular Ni-A12O3 thin films

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Plastic Deformation ◽  
Magnetic Properties ◽  
Percolation Threshold ◽  
Volume Fraction ◽  
Electrical And Magnetic Properties ◽  
Low Load

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.

Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

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