Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

scholarly journals Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δThin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
J. Chen ◽  
L. Hu ◽  
W. J. Lu ◽  
B. Yuan ◽  
K. J. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Transition ◽  
Compressive Strain ◽  
Ferromagnetic Transition ◽  
Strongly Correlated ◽  
Orbital Ordering ◽  
Insulator Metal Transition ◽  
Ordering Transition ◽  
Orbital Occupation

The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δthin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δthin films grown on the LaAlO3substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

Strain-controlled electrical and magnetic properties of SrRuO3 thin films with Sr3Al2O6 buffer layers

2021 ◽  
Vol 118 (7) ◽  
pp. 072407
Author(s):  
Chuan-Zhu Hu ◽  
You-Shan Zhang ◽  
Xu Niu ◽  
Ni Zhong ◽  
Ping-Hua Xiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Buffer Layers ◽  
Electrical And Magnetic Properties

Effect of Fe Doping on the Structural, Electrical and Magnetic Properties of Perovskite La0.7Ca0.3Mn1-xFexO 3 (X = 0, 0.01, 0.03 and 0.05)

2021 ◽  
Vol 317 ◽  
pp. 10-16
Author(s):  
Nor Azah Nik-Jaafar ◽  
Roslan Abd-Shukor ◽  
Muhammad Aizat Kamarudin
Keyword(s):  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Xrd Analysis ◽  
Ferromagnetic Transition ◽  
Fe Doping ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Fe Substitution

The effect of Fe-substitution at the Mn-site in La0.7Ca0.3Mn1-xFexO3 (x = 0, 0.01, 0.03 and 0.05) on its structure, electrical and magnetic properties has been studied. These properties were investigated via X-ray diffraction (XRD) analysis, temperature-dependent resistance measurements and temperature-dependent AC magnetic susceptibility measurements. XRD analysis showed all samples are single phase materials. Temperature dependent resistance measurements between 30–300 K showed all samples to undergo insulator-metal transition as temperature decreases. Increase in Fe doping for x = 0, 0.01, 0.03 and 0.05 caused the transition temperature TIM to decrease from 257 K, 244 K, 205 K and 162 K respectively. The magnetic susceptibility measurements showed the samples to exhibit paramagnetic to ferromagnetic transition as temperature decreased. Increase in Fe substitution x at the Mn-site progressively decreased the Curie temperature TC from 250 K at x = 0 to 170 K at x = 0.05.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Percolation Effects in the Mechanical Properties of Granular Ni-A12O3 thin films

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Plastic Deformation ◽  
Magnetic Properties ◽  
Percolation Threshold ◽  
Volume Fraction ◽  
Electrical And Magnetic Properties ◽  
Low Load

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.

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