Low temperature thermal oxidation towards hafnium-coated magnesium alloy for biomedical application

2017 ◽  
Vol 190 ◽  
pp. 181-184 ◽  
Author(s):  
Dongfang Zhang ◽  
Zhengbing Qi ◽  
Binbin Wei ◽  
Zhoucheng Wang
2014 ◽  
Vol 30 (4) ◽  
pp. 543-548 ◽  
Author(s):  
Zhongji Cheng ◽  
Jianshe Lian ◽  
Xiaoli Hu ◽  
Xiaohong Yang ◽  
Guangyu Li

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Jin Huang ◽  
Junqiang Wang ◽  
Xiangdong Su ◽  
Weichang Hao ◽  
Tianmin Wang ◽  
...  

This paper investigated the biocompatibility of nanoporous TiO2coating on NiTi shape-memory alloy (SMA) prepared via dealloying method. Our previous study shows that the dealloying treatment at low temperature leads to 130 nm Ni-free surface titania surface layer, which possesses good bioactivity because of the combination of hydroxyl (OH−) group in the process of dealloying treatment simultaneously. In this paper, the biological compatibility of NiTi alloy before and after dealloying treatment was evaluated and compared by direct contact method with dermal mesenchymal stem cells (DMSCs) by the isolated culture way. The interrelation between the biological compatibility and surface change of material after modification was systematically analyzed. As a consequence, the dealloying treatment method at low temperature could be of interest for biomedical application, as it can avoid sensitization and allergies and improve biocompatibility of NiTi shape-memory alloys. Thus it laid the foundation of the clinical trials for surface modification of NiTi memory alloy.


Author(s):  
Jing Su ◽  
Abu Syed H. Kabir ◽  
Mehdi Sanjari ◽  
In-ho Jung ◽  
Steve Yue

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.


2006 ◽  
Vol 91 (7) ◽  
pp. 1598-1605 ◽  
Author(s):  
N. Khelidj ◽  
X. Colin ◽  
L. Audouin ◽  
J. Verdu ◽  
C. Monchy-Leroy ◽  
...  

2019 ◽  
Vol 33 (12) ◽  
pp. 12894-12904 ◽  
Author(s):  
Qiang Zhang ◽  
Mieko Kumasaki ◽  
Xiongmin Liu ◽  
Fan Ren ◽  
Yosuke Nishiwaki ◽  
...  

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