Study the effect of plasma power density and gold catalyst thickness on Silicon Nanowires growth by Plasma Enhanced Chemical Vapour Deposition

2018 ◽  
Vol 219 ◽  
pp. 127-130 ◽  
Author(s):  
Nafis Ahmed ◽  
P. Balaji Bhargav ◽  
Arokiyadoss Rayerfrancis ◽  
Balaji Chandra ◽  
P. Ramasamy
Keyword(s):  
Power Density ◽  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Gold Catalyst ◽  
Chemical Vapour ◽  
Plasma Power ◽  
Nanowires Growth

Preparation and testing of silicon nanowires

2014 ◽  
Vol 92 (7/8) ◽  
pp. 819-821 ◽  
Author(s):  
Martin Müller ◽  
Jan Kočka ◽  
Hassan G. El Gohary ◽  
Jiri Stuchlik ◽  
Ha Stuchlikova ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapour ◽  
Applied Potential ◽  
Gold Nanoislands

Here we present two ways of preparing lateral (in plane) silicon nanowires with the help of gold nanoislands catalysed plasma enhanced chemical vapour deposition. The role of the applied potential and eventual consecutive hydrogen plasma treatment is tested together with the thickness of the thin Au layer used for self-organised preparation of Au nanoislands.

UHV chemical vapour deposition of silicon nanowires

2005 ◽  
Vol 96 (5) ◽  
pp. 427-428 ◽  
Author(s):  
Volker Schmidt ◽  
Stephan Senz ◽  
Ulrich Gösele
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Chemical Vapour

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

2009 ◽  
Vol 159-160 ◽  
pp. 83-86 ◽  
Author(s):  
B. Salem ◽  
F. Dhalluin ◽  
T. Baron ◽  
H. Jamgotchian ◽  
F. Bedu ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Electrical Characterization

Growth of silicon nanowires by chemical vapour deposition on gold implanted silicon substrates

2006 ◽  
Vol 17 (12) ◽  
pp. 2895-2898 ◽  
Author(s):  
Th Stelzner ◽  
G Andrä ◽  
E Wendler ◽  
W Wesch ◽  
R Scholz ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Substrates

The Benefits of HCl in the Growth of Silicon Nanowires by Chemical Vapour Deposition: Growth of Small Diameter Nanowires and Controlled Facet Evolution

2010 ◽  
Vol 1258 ◽  
Author(s):  
Fabrice Oehler ◽  
Pascal Gentile ◽  
Thierry Baron ◽  
Pierre Ferret
Keyword(s):  
Hydrogen Chloride ◽  
Chemical Vapour Deposition ◽  
Silicon Nanowires ◽  
Surface State ◽  
Vapour Deposition ◽  
Specific Growth ◽  
Chemical Vapour ◽  
Small Diameter ◽  
Nanowire Growth ◽  
Nanowire Structure

AbstractThe effects of hydrogen chloride (HCl) on the growth of silicon nanowires by Chemical Vapour Deposition are investigated. HCl is found to enable the growth of small diameter gold-catalyzed silicon nanowires while reducing the kink occurrence. Specific growth sequences are presented in order to obtain a one-to-one ratio of nanowire growth versus gold colloidal seed. Other growth sequences using HCl are illustrated but achieve mixed results concerning the nanowire structure and the surface state.

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