Effect of metal oxide charge transfer layers on the photovoltaic performance of carbon nanotube heterojunction solar cells

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

Download Full-text

Perspective on Predominant Metal Oxide Charge Transporting Materials for High-Performance Perovskite Solar Cells

Frontiers in Materials ◽

10.3389/fmats.2021.655207 ◽

2021 ◽

Vol 8 ◽

Author(s):

Mriganka Singh ◽

Chih Wei Chu ◽

Annie Ng

Keyword(s):

Solar Cells ◽

Metal Oxide ◽

Charge Transport ◽

High Performance ◽

Collection Efficiency ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Future Research ◽

Charge Collection Efficiency ◽

Oxide Charge

Nowadays, the power conversion efficiency of organometallic mixed halide perovskite solar cells (PSCs) is beyond 25%. To fabricate highly efficient and stable PSCs, the performance of metal oxide charge transport layers (CTLs) is one of the key factors. The CTLs are employed in PSCs to separate the electrons and holes generated in the perovskite active layer, suppressing the charge recombination rate so that the charge collection efficiency can be increased at their respective electrodes. In general, engineering of metal oxide electron transport layers (ETLs) is found to be dominated in the research community to boost the performance of PSCs due to the resilient features of ETLs such as excellent electronic properties, high resistance to thermal temperature and moisture, ensuring good device stability as well as their high versatility in material preparation. The metal oxide hole transport layers in PSCs are recently intensively studied. The performance of PSCs is found to be very promising by using optimized hole transport materials. This review concisely discusses the evolution of some prevalent metal oxide charge transport materials (CTMs) including TiO2, SnO2, and NiOx, which are able to yield high-performance PSCs. The article begins with introducing the development trend of PSCs using different types of CTLs, pointing out the important criteria for metal oxides being effective CTLs, and then a variety of preparation methods for CTLs as employed by the community for high-performance PSCs are discussed. Finally, the challenges and prospects for future research direction toward scalable metal oxide CTM-based PSCs are delineated.

Download Full-text