Fabrication and electroluminescence of sheet-like ZnO/Si light-emitting diodes by radio frequency magnetron sputtering method

2020 ◽  
Vol 262 ◽  
pp. 127028 ◽  
Author(s):  
Peng Fei Ji ◽  
Yong Li ◽  
Feng Qun Zhou ◽  
Yu Li Song ◽  
Hong Chun Huang
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Light Emitting Diodes ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Light Emitting

Investigation on infrared electroluminescence from Er3+-doped Tb2O3 light-emitting diodes

2021 ◽  
pp. 2050005
Author(s):  
Hao Li ◽  
Shenwei Wang ◽  
Liyuan Bai ◽  
Kai Ou ◽  
Yanwei Zhang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Energy Transfer ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Doping Concentration ◽  
Light Emitting Diodes ◽  
Radio Frequency Magnetron Sputtering ◽  
Light Emitting ◽  
Structure And Morphology ◽  
Electroluminescence Intensity

Tb2O3:Er light-emitting diodes were prepared by radio-frequency magnetron sputtering method and the EL performance of the devices were studied. The crystal structure and morphology of the annealed films were investigated by XRD and SEM, respectively. The EL spectrum was achieved and the EL principle was discussed. Six emission peaks of Er[Formula: see text] located at 402, 517, 548, 649, 691, and 1,538[Formula: see text]nm were observed, achieving energy transfer from Tb[Formula: see text] to Er[Formula: see text]. In order to study the effect of Er+ doping concentration, the doping concentrations of Tb2O3:Er films were from 5[Formula: see text]at.% to 20[Formula: see text]at.%. The effect on electroluminescence intensity of doping concentration was investigated and the optimal doped concentration was 15[Formula: see text]at. %.

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

2014 ◽  
Vol 1675 ◽  
pp. 41-44
Author(s):  
Kuang-Po Hsueh ◽  
Po-Wei Cheng ◽  
Wen-Yen Lin ◽  
Hsien-Chin Chiu ◽  
Hsiang-Chun Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Transparent Contact

ABSTRACTA radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 nm at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

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