Comments on “Investigation on novel bulk size single crystal of Glycine with metal ions grown by solution growth method for photonic applications”

2020 ◽  
Vol 272 ◽  
pp. 127884
Author(s):  
Bikshandarkoil R. Srinivasan ◽  
Aram M. Petrosyan
Keyword(s):  
Metal Ions ◽  
Single Crystal ◽  
Solution Growth ◽  
Growth Method

Investigation on novel bulk size single crystal of Glycine with metal ions grown by solution growth method for photonic applications

2019 ◽  
Vol 257 ◽  
pp. 126674 ◽  
Author(s):  
R. Vivekanandhan ◽  
S. Santhanakrishnan ◽  
B. Deepanraj ◽  
Geetha Palani ◽  
V. Chithambaram
Keyword(s):  
Metal Ions ◽  
Single Crystal ◽  
Solution Growth ◽  
Growth Method

scholarly journals Flux Single Crystal Growth of BaFe12−xTixO19 with Titanium Gradient

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 264
Author(s):  
Vladimir E. Zhivulin ◽  
Evgeny A. Trofimov ◽  
Olga V. Zaitseva ◽  
Dmitry A. Zherebtsov ◽  
Danil A. Uchaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Barium Hexaferrite ◽  
Solution Growth ◽  
Controlled Cooling ◽  
Substitution Level ◽  
Growth Method ◽  
Ti Substitution ◽  
Relationship Of ◽  
Top Seeded Solution Growth ◽  
The Relationship

Titanium substituted barium hexaferrite BaFe12−xTixO19 single crystal was grown by the top seeded solution growth method from flux on the seed with controlled cooling below 1175 °C. Titanium substitution level gradient in the single crystal in the vertical and horizontal directions was studied. Two planes were cut and polished. A justification for the linear gradient of Ti substitution in a BaFe12−xTixO19 single crystal is proposed; substitution levels in the center and periphery were determined. It was shown that upon growth by the top seeded solution growth method, crystals with a linear Ti substitution level gradient from x = 0.73 to x = 0.77 for a distance of 11 mm along pulling direction were obtained. The study led to the conclusion about the relationship of the gradient and changes in the composition of the nutrient solution.

scholarly journals High-quality K0.47Na0.53NbO3 single crystal toward high performance transducer

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7003-7007 ◽  
Author(s):  
Chengpeng Hu ◽  
Hao Tian ◽  
Xiangda Meng ◽  
Guang Shi ◽  
Wenwu Cao ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Growth Method ◽  
Top Seeded Solution Growth

A large-sized, high-quality single crystal of K0.47Na0.53NbO3 was grown by the top-seeded solution growth method.

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent

2019 ◽  
Vol 963 ◽  
pp. 85-88 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Yutaka Kishida ◽  
Kazuaki Seki
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Growth Conditions ◽  
Bulk Crystal ◽  
Solution Growth ◽  
Heat Transfer Analysis ◽  
Growth Method ◽  
The Magnetic Field

We grew large diameter and long size 4H-SiC crystals by the solution growth method using Si-Cr based solvent. To optimize the crystal growth conditions, we applied two-dimensional axisymmetric steady-state analysis to conduct a comprehensive heat transfer analysis that calculates the magnetic field, heat transfer, and liquid flow. In particular, by optimizing the solution surface temperature environment and the seed shaft structure, we suppressed parasitic undesirable crystal formations and promoted single crystal growth at the same time. Consequently, we obtained a 2-inch bulk crystal with a thickness of 20 mm and a 4-inch bulk crystal with a thickness of 15 mm.

Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JE17 ◽  
Author(s):  
Hiroaki Matsubara ◽  
Kohei Mizuno ◽  
Yukihisa Takeuchi ◽  
Shunta Harada ◽  
Yasuo Kitou ◽  
...  
Keyword(s):  
Single Crystal ◽  
Solution Growth ◽  
Growth Method ◽  
Direct Growth

3C-SiC Crystal on Sapphire by Solution Growth Method

2015 ◽  
Vol 821-823 ◽  
pp. 185-188
Author(s):  
Kenji Shibata ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Sapphire Substrate ◽  
Carbon Deposition ◽  
Carbon Layer ◽  
Solution Growth ◽  
Heating Process ◽  
Growth Method ◽  
Si Wafer

We realized the growth of 3C-SiC crystal on sapphire by solution growth method. The carbon deposition on a sapphire substrate before growth is the key point for this technology. This carbon layer plays a role to protect the dissolution of sapphire by Si solvent. Single crystal of 3C-SiC was grown on the whole surface of the sapphire substrate. Surprisingly, the 3C-SiC layer did not directly grown on the sapphire substrate. The single crystal 3C-SiC layer formed by the reaction between the deposited carbon and the Si wafer that is a solvent material below the melting point of silicon during heating process before the growth. The 3C-SiC grew on the 3C-SiC layer. In this process, the deposited carbon play another important role.

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