Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate

2020 ◽  
Vol 277 ◽  
pp. 128395
Author(s):  
Depu Ma ◽  
Shengrui Xu ◽  
Hongchang Tao ◽  
Wen Li ◽  
Ruoshi Peng ◽  
...  
2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiaqi Zhang ◽  
Yichang Wu ◽  
Zhe Li ◽  
Yachao Zhang ◽  
Yue Peng ◽  
...  

Abstract A high-performance transfer printing method using a new soluble tape which can be dissolved in acetone is proposed to be used in heterogeneous integration. Si inks array was transferred from SOI wafers onto various substrates without adhesion promoter by this new method which we refer to as the acetone soluble tape (AST) method to compare with other transfer printing methods by using thermal release tape (TRT), water soluble tape (WST) and polydimethylsiloxane (PDMS). By using the AST method, the transfer printing process does not involve interface contention between stamp/inks and inks/receiver substrate so that it maximizes the transfer printing efficiency. Experimental results present the AST method has good performances, and various alien substrates, even curvilinear surfaces, can be selected as receiver substrates by the AST method. To examine the quality of the transferred Si inks, the Si TFTs were fabricated by using the Si membrane transferred by the AST method on sapphire substrate and the devices show the good performance. All the results confirm that the AST method is an effective method in heterogeneous integration.


2001 ◽  
Vol 222 (1-2) ◽  
pp. 110-117 ◽  
Author(s):  
H.Z Xu ◽  
K Takahashi ◽  
C.X Wang ◽  
Z.G Wang ◽  
Y Okada ◽  
...  

2013 ◽  
Vol 25 (1) ◽  
pp. 267-272 ◽  
Author(s):  
Dechao Yang ◽  
Hongwei Liang ◽  
Yu Qiu ◽  
Rensheng Shen ◽  
Yang Liu ◽  
...  

2010 ◽  
Vol 45 (7) ◽  
pp. 703-706 ◽  
Author(s):  
Mu-Jen Lai ◽  
Liann-Be Chang ◽  
Tzu-Tao Yuan ◽  
Ray-Ming Lin

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.


Sign in / Sign up

Export Citation Format

Share Document