High conductivity PEDOT:PSS thin films affording improved open circuit voltages in PEDOT:PSS-Si heterojunction solar cells

2021 ◽  
pp. 131466
Author(s):  
Weijie Zhou ◽  
Hua Zhang ◽  
Juan Wang ◽  
Qianwen Wei ◽  
Zhengang Chen ◽  
...  
2018 ◽  
Vol 6 (39) ◽  
pp. 19190-19200 ◽  
Author(s):  
Mary Allison Kelly ◽  
Qianqian Zhang ◽  
Zhengxing Peng ◽  
Victoria Noman ◽  
Chenhui Zhu ◽  
...  

Comparing the efficiency of terpolymers vs. ternary blends, this study focuses on two polymers with structurally similar backbones (monoCNTAZ and FTAZ) yet markedly different open circuit voltages.


MRS Advances ◽  
2015 ◽  
Vol 1 (59) ◽  
pp. 3897-3902 ◽  
Author(s):  
Zi Ouyang ◽  
Yang Li ◽  
Shouyi Xie ◽  
Alison Lennon

ABSTRACTSilicon heterojunction (Si-HJT) solar cells are one of the most efficient silicon-based solar cells, due largely to their high open-circuit voltages. For the transparent conductive oxide (TCO) layers, there is a design trade-off between their conductance and their parasitic light absorption, and this trade-off can be a performance-limiting factor for Si-HJT solar cells. It has been demonstrated that silver nanowire (AgNW) networks with superior optical and electrical performances, can complement TCOs. To evaluate the performance of AgNW-TCO hybrid electrodes for Si-HJT cells, it is beneficial to numerically simulate and optimize the optical and electrical performances of the entire device. However, the dimensions of the AgNWs are massively different to the dimensions of the other components of the cells, making individual modeling methods incapable. In this paper, we use an angular matrix framework (AMF) to resolve the challenge, where matrices are used to describe the transition of the angular distribution of the light when it is reflected or transmitted at the interface, or absorbed in the bulk. These matrices pass optical information between nanoscale and microscale components of the cell structure. Using AMF, we calculated the optical properties of the devices, and demonstrated that the AgNW-TCO electrode has advantages over a TCO electrode. Guidance on how the optimization of the composite electrode can be achieved was provided.


Author(s):  
Bryan Voigt ◽  
William Moore ◽  
Moumita Maiti ◽  
Jeff Walter ◽  
Bhaskar Das ◽  
...  

<div>Pyrite FeS<sub>2</sub> has long been considered a potentially ideal photovoltaic material, but solar cells utilizing pyrite exhibit low open-circuit voltages (<i>V</i><sub>OC</sub>) and have failed to achieve conversion efficiencies >3 %. The recent discovery of a conductive <i>p</i>-type surface layer on <i>n</i>-type pyrite single crystals raises the intriguing possibility that the low <i>V</i><sub>OC</sub> results from a leaky internal <i>p-n</i> junction between the surface and interior. Here, we reveal this internal junction, for the first time, through horizontal electronic transport measurements on sulfur vacancy (V<sub>S</sub>)- and Co-doped <i>n</i>-type pyrite single crystals. We observe a steep increase in resistance upon cooling heavily V<sub>S</sub>-doped crystals below 200 K, as the dominant charge transport crosses over from interior to surface conduction. The frequently employed two-resistor equivalent circuit model for lightly-doped pyrite crystals fails to reproduce this steep rise, but it can be accounted for, with high fidelity, by adding an internal Schottky junction resistance between the surface and the interior. The average extracted Schottky barrier height is 320 meV (varying from 130-560 meV), significantly below expectations from band bending calculations (>750 meV), but similar in magnitude to <i>V</i><sub>OC</sub> values reported for pyrite heterojunction solar cells. This internal p-n junction is thus directly implicated as the origin of the long-standing low-<i>V</i><sub>OC</sub> problem in pyrite.</div><div><br></div>


2001 ◽  
Vol 708 ◽  
Author(s):  
Jessica Krüger ◽  
Udo Bach ◽  
Robert Plass ◽  
Marco Piccerelli ◽  
Le Cevey ◽  
...  

ABSTRACTThe performance of solid-state dye-sensitized solar cells based on spiro-MeOTAD (2,2'7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene) was considerably improved by decreasing charge recombination across the interface of the heterojunction. This was achieved by blending the hole conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF3SO2]2N. Open circuit voltages (Uoc) over 900mV and short circuit currents (Isc) up to 5.1 mA were obtained, yielding an overall efficiency of 2.56 % at AM1.5 illumination. Further improvement of the device performance was observed when conducting stripes of silver were deposited onto the devices as charge collector. The beneficial effect however could be assigned to the contamination of the dye-sensitized TiO2 film with silver during the dyeing process.


2020 ◽  
Vol 02 (03) ◽  
pp. 229-234 ◽  
Author(s):  
Kaan Menekse ◽  
Rebecca Renner ◽  
Bernhard Mahlmeister ◽  
Matthias Stolte ◽  
Frank Würthner

An electron-poor bowl-shaped naphthalimide-annulated corannulene with branched alkyl residues in the imide position was synthesized by a palladium-catalyzed cross-coupling annulation sequence. This dipolar compound exhibits strong absorption in the visible range along with a low-lying LUMO level at –3.85 eV, enabling n-type charge transport in organic thin-film transistors. Furthermore, we processed inverted bulk-heterojunction solar cells in combination with the two donor polymers PCE–10 and PM6 to achieve open-circuit voltages up to 1.04 V. By using a blend of the self-assembled naphthalimide-annulated corannulene and PCE–10, we were able to obtain a power conversion efficiency of up to 2.1%, which is to the best of our knowledge the highest reported value for a corannulene-based organic solar cell to date.


2020 ◽  
Author(s):  
Bryan Voigt ◽  
William Moore ◽  
Moumita Maiti ◽  
Jeff Walter ◽  
Bhaskar Das ◽  
...  

<div>Pyrite FeS<sub>2</sub> has long been considered a potentially ideal photovoltaic material, but solar cells utilizing pyrite exhibit low open-circuit voltages (<i>V</i><sub>OC</sub>) and have failed to achieve conversion efficiencies >3 %. The recent discovery of a conductive <i>p</i>-type surface layer on <i>n</i>-type pyrite single crystals raises the intriguing possibility that the low <i>V</i><sub>OC</sub> results from a leaky internal <i>p-n</i> junction between the surface and interior. Here, we reveal this internal junction, for the first time, through horizontal electronic transport measurements on sulfur vacancy (V<sub>S</sub>)- and Co-doped <i>n</i>-type pyrite single crystals. We observe a steep increase in resistance upon cooling heavily V<sub>S</sub>-doped crystals below 200 K, as the dominant charge transport crosses over from interior to surface conduction. The frequently employed two-resistor equivalent circuit model for lightly-doped pyrite crystals fails to reproduce this steep rise, but it can be accounted for, with high fidelity, by adding an internal Schottky junction resistance between the surface and the interior. The average extracted Schottky barrier height is 320 meV (varying from 130-560 meV), significantly below expectations from band bending calculations (>750 meV), but similar in magnitude to <i>V</i><sub>OC</sub> values reported for pyrite heterojunction solar cells. This internal p-n junction is thus directly implicated as the origin of the long-standing low-<i>V</i><sub>OC</sub> problem in pyrite.</div><div><br></div>


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