Effect of Sn doping on the Structural, Optical, Electrical Properties and Diode characteristics of WO3 thin films Deposited by Jet Nebulizer Spray Technique

2019 ◽  
Vol 18 ◽  
pp. 1648-1657
Author(s):  
K. Shanmugasundaram ◽  
P. Thirunavukkarasu ◽  
M. Balaji
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sn Doping ◽  
Spray Technique ◽  
Jet Nebulizer ◽  
Wo3 Thin Films ◽  
Nebulizer Spray

scholarly journals Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

2017 ◽  
Vol 33 (5) ◽  
pp. 2484-2491 ◽  
Author(s):  
K. Shanmugasundaram ◽  
P. Thirunavukkarasu ◽  
M. Ramamurthy ◽  
M. Balaji ◽  
J. Chandrasekaran
Keyword(s):  
Thin Films ◽  
Jet Nebulizer ◽  
Junction Diode ◽  
Wo3 Thin Films ◽  
Nebulizer Spray

Improved UV Photodetection of Terbium-doped NiO thin films prepared by cost-effective nebulizer spray technique

2021 ◽  
Vol 127 ◽  
pp. 105673
Author(s):  
M. Dharani Devi ◽  
A. Vimala Juliet ◽  
K. Hariprasad ◽  
V. Ganesh ◽  
H. Elhosiny Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Cost Effective ◽  
Spray Technique ◽  
Nebulizer Spray

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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