UV–Visible photo sensing properties of CdS-porous silicon (PS): P-Si and ZnO-PS: p-Si heterostructures metal-semiconductor-metal (MSM) based devices

2020 ◽  
Author(s):  
S. Sarmah ◽  
M. Das ◽  
D. Sarkar
Keyword(s):  
Porous Silicon ◽  
Sensing Properties ◽  
Metal Semiconductor Metal ◽  
Uv Visible

GaN MSM UV Sensor Using Multi-Layer Graphene Schottky Electrodes

2013 ◽  
Vol 481 ◽  
pp. 146-149 ◽  
Author(s):  
Chang Ju Lee ◽  
Hyeon Gu Cha ◽  
Seul Ki Hong ◽  
Seung Hyun Doh ◽  
Yi Sak Koo ◽  
...  
Keyword(s):  
Current Density ◽  
Applied Bias ◽  
Uv Sensor ◽  
Response Characteristics ◽  
Layer Graphene ◽  
Metal Type ◽  
Metal Semiconductor Metal ◽  
Uv Visible ◽  
Uv Response ◽  
First Time

We demonstrated a metal-semiconductor-metal type GaN UV sensor for the first time by using multi-layer graphene as a Schottky electrode. Multi-layer graphene shows good Schottky electrode characteristic and fabricated UV sensor shows good UV response characteristics. The maximum dark current density and photo-responsive current density were 6.42 × 10-9 A/cm2 and 5.57 × 10-5 A/cm2 at the 10 V bias, respectively. UV/visible rejection ratios were higher than 103 with each applied bias from 1 V to 15 V.

UV-visible photocurrent enhancement using metal–semiconductor–metal with symmetric and asymmetric double Schottky barriers

Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12848-12854 ◽  
Author(s):  
Li Zhu ◽  
Kai Liu ◽  
Taozheng Hu ◽  
Wen Dong ◽  
Zhuo Chen ◽  
...  
Keyword(s):  
Visible Light ◽  
Schottky Barriers ◽  
Metal Nanostructures ◽  
Metal Semiconductor Metal ◽  
Uv Visible

We report that Schottky barriers in the metal-semiconductor-metal nanostructures could be designed to further improve photocurrent under the illumination of both UV and visible light.

scholarly journals Quantum dot-doped porous silicon metal–semiconductor metal photodetector

2012 ◽  
Vol 7 (1) ◽  
pp. 291 ◽  
Author(s):  
Chia-Man Chou ◽  
Hsing-Tzu Cho ◽  
Vincent K S Hsiao ◽  
Ken-Tye Yong ◽  
Wing-Cheung Law
Keyword(s):  
Porous Silicon ◽  
Quantum Dot ◽  
Metal Semiconductor Metal

Room temperature NO2-sensing properties of porous silicon/tungsten oxide nanorods composite

2015 ◽  
Vol 640 ◽  
pp. 517-524 ◽  
Author(s):  
Yulong Wei ◽  
Ming Hu ◽  
Dengfeng Wang ◽  
Weiyi Zhang ◽  
Yuxiang Qin
Keyword(s):  
Porous Silicon ◽  
Tungsten Oxide ◽  
Room Temperature ◽  
Sensing Properties ◽  
Oxide Nanorods

Formation of two-layer composite-on-insulator structures based on porous silicon and SnO x . Study of their electrical and gas-sensing properties

2014 ◽  
Vol 48 (3) ◽  
pp. 397-401 ◽  
Author(s):  
V. V. Bolotov ◽  
V. E. Roslikov ◽  
E. A. Roslikova ◽  
K. E. Ivlev ◽  
E. V. Knyazev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Layer Composite ◽  
Gas Sensing Properties

scholarly journals Preparation and gas-sensing properties of the silver nanoparticles/porous silicon composite

2015 ◽  
Vol 64 (13) ◽  
pp. 137104
Author(s):  
Yan Da-Li ◽  
Li Shen-Yu ◽  
Liu Shi-Yu ◽  
Zhu Yun
Keyword(s):  
Silver Nanoparticles ◽  
Porous Silicon ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Gas Sensing Properties

Preparation of porous silicon/Pd-loaded WO 3 nanowires for enhancement of ammonia sensing properties at room temperature

2018 ◽  
Vol 79 ◽  
pp. 113-118 ◽  
Author(s):  
Xiaoyong Qiang ◽  
Ming Hu ◽  
Boshuo Zhao ◽  
Yue Qin ◽  
Tianyi Zhang ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Sensing Properties ◽  
Ammonia Sensing

Development of Porous Silicon Based Visible Light Photodetectors

2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Silicon Film ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Scanning Electron ◽  
Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

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