Development on measurement method for Thomson Coefficient of thin film

Measurement ◽  
2021 ◽  
pp. 110010
Author(s):  
Hiroyuki Fujiki ◽  
Yasutaka Amagai ◽  
Kenjiro Okawa ◽  
Takashi Harumoto ◽  
Nobu-Hisa Kaneko
Measurement ◽  
2021 ◽  
Vol 175 ◽  
pp. 108984
Author(s):  
Jianhua Tang ◽  
Lezhang Liu ◽  
Li Jiang ◽  
Hui Huang ◽  
Qiongyao Wang

2015 ◽  
pp. 20-25
Author(s):  
Asep Saefumullah ◽  
Ratsania Rahmaniati H

High concentration of phosphates in the water can lead to eutrophication which leads to uncontrolled growth of algae (algae blooming). It underlies the need for determining the concentration of phosphate in the aquatic environment. However, the concentration of phosphate may change during storage of samples so that an accurate analysis difficult to achieve unless carried out in-situ. DGT (Diffusive Gradient in Thin Films) is an in-situ measurement method developed for measuring phosphate and metal. In this study the use of Fe-Al-Oxide as a binding gel that is expected to bind phosphate with a capacity greater than ferrihydrite. N, N'-methylenebisacrylamide is used as a substitute for commercial DGT Crosslinker as crosslinking for a cheaper price and selective for small molecule. Ferrihydrite-DGT and Fe-Al-Oxide-DGT are tested with a variety of concentrations, pH, and contact time. In both methods DGT found that the pH for phosphate measurements performed at pH 3. Capacity of Fe-Al-Oxide binding gel known to be higher than the ferrihydrite binding gel with result Cferrihydrite-DGT:Cstart is 76% and CFe-Al-Oxide-DGT:Cstart is 82%.DOI :http://dx.doi.org/10.15408/jkv.v0i0.3597


2004 ◽  
Vol 18 (1) ◽  
Author(s):  
Young Tae Im ◽  
Seung Tae Choi ◽  
Tae Sang Park ◽  
Jae Hyun Kim

Netsu Bussei ◽  
1997 ◽  
Vol 11 (2) ◽  
pp. 46-52 ◽  
Author(s):  
Nobuya TAKABATAKE ◽  
Takeshi KOBAYASHI

2014 ◽  
Vol 87 ◽  
pp. 632-635 ◽  
Author(s):  
R. Beigelbeck ◽  
D. Reyes-Romero ◽  
S. Cerimovic ◽  
F. Kohl ◽  
T. Voglhuber-Brunnmaier ◽  
...  

2014 ◽  
Vol 915-916 ◽  
pp. 833-837
Author(s):  
Jiang Wei Fan ◽  
Xiao Gang Han ◽  
Feng Wang

Ultra-thin films of SiO2 (nominally 2, 4, 6, 8 and 10nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these thin films was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide layers by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of the most importance in the contribution of the uncertainties. For the SiO2 ultra-thin film with the nominal thickness of 2nm, it could generate 20% of the uncertainty.


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