High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors

Microelectronic Engineering ◽

10.1016/j.mee.2006.01.270 ◽

2006 ◽

Vol 83 (4-9) ◽

pp. 1740-1744 ◽

Author(s):

Hideo Sunami ◽

Shunpei Matsumura ◽

Koji Yoshikawa ◽

Kiyoshi Okuyama

Keyword(s):

Aspect Ratio ◽

Metal Oxide ◽

Structure Formation ◽

High Aspect Ratio ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Aspect Ratio Structure

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits

IEEE Electron Device Letters ◽

10.1109/led.2015.2455556 ◽

2015 ◽

Vol 36 (9) ◽

pp. 887-889 ◽

Author(s):

Woo Young Choi ◽

Yong Jun Kim

Keyword(s):

Metal Oxide ◽

Three Dimensional ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Reconfigurable Circuits

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Fundamental Study of Complementary Metal Oxide Semiconductor Image Sensor for Three-Dimensional Image Processing System

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c077 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C077 ◽

Author(s):

Kenji Makita ◽

Kouji Kiyoyama ◽

Takeaki Sugimura ◽

Kang Wook Lee ◽

Takafumi Fukushima ◽

...

Keyword(s):

Image Processing ◽

Metal Oxide ◽

Three Dimensional ◽

Processing System ◽

Complementary Metal Oxide Semiconductor ◽

Image Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fundamental Study ◽

Dimensional Image

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Investigation of Local Bending Stress Effect on Complementary Metal–Oxide–Semiconductor Characteristics in Thinned Si Chip for Chip-to-Wafer Three-Dimensional Integration

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cb11 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CB11 ◽

Author(s):

Hisashi Kino ◽

Ji Choel Bea ◽

Mariappan Murugesan ◽

Kang Wook Lee ◽

Takafumi Fukushima ◽

...

Keyword(s):

Metal Oxide ◽

Three Dimensional ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effect ◽

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Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Random Dopant Fluctuation ◽

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Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.110210 ◽

2011 ◽

Vol 50 (11R) ◽

pp. 110210 ◽

Author(s):

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Cheng-Hsin Chen ◽

Yi-Hsuan Fan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Dimensional Simulation

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InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

Applied Physics Letters ◽

10.1063/1.4934745 ◽

2015 ◽

Vol 107 (17) ◽

pp. 173501 ◽

Author(s):

M. S. Aksenov ◽

A. Yu. Kokhanovskii ◽

P. A. Polovodov ◽

S. F. Devyatova ◽

V. A. Golyashov ◽

...

Keyword(s):

Metal Oxide ◽

Structure Formation ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Townsend Discharge ◽

Metal Oxide Semiconductor Structure

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

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Ultrasonic Spray Deposition of Metal Oxide Films on High Aspect Ratio Microstructures for Three-Dimensional All-Solid-State Li-ion Batteries

ACS Energy Letters ◽

10.1021/acsenergylett.6b00449 ◽

2016 ◽

Vol 1 (6) ◽

pp. 1184-1188 ◽

Author(s):

Evert Jonathan van den Ham ◽

Sven Gielis ◽

Marlies K. Van Bael ◽

An Hardy

Keyword(s):

Solid State ◽

Aspect Ratio ◽

Metal Oxide ◽

High Aspect Ratio ◽

Spray Deposition ◽

Three Dimensional ◽

Li Ion Batteries ◽

Metal Oxide Films ◽

Ultrasonic Spray ◽

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Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.27.5901 ◽

1983 ◽

Vol 27 (10) ◽

pp. 5901-5903 ◽

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System ◽

Dimensional Models ◽

Three Dimensional Models

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