Optical generation of free charge carriers in nanocrystalline tin oxide for gas sensor application

Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au-coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory taking into account the free charge carriers in the indium tin oxide. The data for the UV-treated sample exclude the theoretical results obtained with account of free charge carriers. These data are found to be in a very good agreement with theory disregarding the free charge carriers in an indium tin oxide film. A possible theoretical explanation of our observations as a result of phase transition of indium tin oxide from metallic to dielectric state is discussed in comparison with other related experiments.

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High Proficient Sensing Response in Clad Modified Ceria Doped Tin Oxide Fiber Optic Toxic Gas Sensor Application

Sensors and Actuators A Physical ◽

10.1016/j.sna.2021.113114 ◽

2021 ◽

pp. 113114

Author(s):

B. Renganathan ◽

Subha Krishna Rao ◽

A.R. Ganesan ◽

A. Deepak

Keyword(s):

Gas Sensor ◽

Tin Oxide ◽

Fiber Optic ◽

Sensor Application ◽

Oxide Fiber ◽

Toxic Gas

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OBSERVATION OF REDUCTION IN CASIMIR FORCE WITHOUT CHANGE OF DIELECTRIC PERMITTIVITY

International Journal of Modern Physics A ◽

10.1142/s0217751x12600019 ◽

2012 ◽

Vol 27 (15) ◽

pp. 1260001 ◽

Cited By ~ 12

Author(s):

A. A. BANISHEV ◽

C.-C. CHANG ◽

R. CASTILLO-GARZA ◽

G. L. KLIMCHITSKAYA ◽

V. M. MOSTEPANENKO ◽

...

Keyword(s):

Dielectric Permittivity ◽

Oxide Film ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Casimir Force ◽

Measurement Data ◽

Theoretical Explanation ◽

Charge Carriers ◽

Free Charge ◽

Good Agreement

Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au -coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory taking into account the free charge carriers in the indium tin oxide. The data for the UV-treated sample exclude the theoretical results obtained with account of free charge carriers. These data are found to be in a very good agreement with theory disregarding the free charge carriers in an indium tin oxide film. A possible theoretical explanation of our observations as a result of phase transition of indium tin oxide from metallic to dielectric state is discussed in comparison with other related experiments.

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Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

MRS Proceedings ◽

10.1557/proc-719-f8.35 ◽

2002 ◽

Vol 719 ◽

Author(s):

Galina Khlyap

Keyword(s):

Room Temperature ◽

Film Surface ◽

Charge Carriers ◽

Barrier Structure ◽

Free Charge ◽

Current Voltage ◽

Capacitance Voltage ◽

Laser Engineering ◽

Charged Defects ◽

Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

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