Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

scholarly journals Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Dong Luo ◽  
Yuan-Hua Lin ◽  
Xuehui Zhang ◽  
Deping Liu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Double Exchange ◽  
Host Lattice ◽  
Charge Carriers ◽  
Fe Doping ◽  
Free Charge ◽  
Ferromagnetic Properties ◽  
Electrospinning Method ◽  
Fe Ions

Ni1−xFexOnanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

scholarly journals Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

2021 ◽  
Author(s):  
EMINE ALDIRMAZ ◽  
M. Güler ◽  
E. Güler
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Phase Identification ◽  
Frequency Interval ◽  
Electrical Measurements ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Type Semiconductor ◽  
Diode Current

Abstract In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly ​​ rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

scholarly journals Нерезонансное обращение волнового фронта света на поверхности пленок GaN при большой мощности оптического возбуждения

2019 ◽  
Vol 53 (1) ◽  
pp. 26
Author(s):  
А.Н. Грузинцев ◽  
А.Н. Редькин
Keyword(s):  
Photon Energy ◽  
Signal Intensity ◽  
Room Temperature ◽  
Phase Conjugation ◽  
Charge Carriers ◽  
Nitrogen Laser ◽  
Free Charge ◽  
Laser Pumping ◽  
Infrared Spectral ◽  
First Time

AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Schottky Barriers on p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
N.I. Kuznetsov ◽  
E.V. Kalinina ◽  
V.A. Soloviev ◽  
V.A. Dmitriev
Keyword(s):  
Room Temperature ◽  
Current Flow ◽  
Thermal Evaporation ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
Flow Mechanism ◽  
Vacuum Thermal Evaporation ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

scholarly journals Особенности транспорта электронов и фотопроводимости в слое наноразмерных частиц сульфида свинца

2019 ◽  
Vol 45 (8) ◽  
pp. 3
Author(s):  
М.И. Шишкин ◽  
М.В. Гавриков ◽  
И.Т. Ягудин ◽  
А.Г. Роках
Keyword(s):  
Basic Mechanism ◽  
Charge Carriers ◽  
Optical Measurements ◽  
Free Charge ◽  
Current Voltage ◽  
Wide Range ◽  
Current Change ◽  
Current Voltage Characteristics ◽  
Lead Sulfide Nanoparticles ◽  
A Current

In the lead sulfide nanoparticles-based layers deposited from alcohol suspensions, analysis of the current-voltage characteristics made it possible to establish the basic mechanism of electron transport. Previously, using optical measurements in the range of 3500 nm, it was shown that the organic component in such layers was practically absent. When exposed to wide range radiation corresponding to the “transparency window” of the atmosphere of 8000–14000 nm, a current change in PbS nanodust was detected, where, as previously shown, absorption on free charge carriers can occur.

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

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