Optical generation of free charge carriers in thin films of tin oxide

2011 ◽  
Vol 45 (2) ◽  
pp. 236-240 ◽  
Author(s):  
I. A. Zhurbina ◽  
O. I. Tsetlin ◽  
V. Yu. Timoshenko
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Charge Carriers ◽  
Free Charge ◽  
Optical Generation

scholarly journals Edge Absorption of thin Films –Ga2O3

2015 ◽  
Vol 16 (2) ◽  
pp. 302-306
Author(s):  
O.M. Bordun ◽  
B.O. Bordun ◽  
V.B. Lushchanets ◽  
I.Yo. Kukharskyy
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Absorption Edge ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Hydrogen Atmosphere ◽  
Argon Atmosphere ◽  
Charge Carriers ◽  
Free Charge ◽  
Moss Effect

Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increases from 4.60 to 4.65 eV after the heat treatment films in argon atmosphere and to 5.20 eV after the reduction of annealed films in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in b–Ga2O3 films after annealing and after reduction in hydrogen was estimated. It was found that the concentration of charge carriers after heat treatment in argon atmosphere is 7.30´1017 cm–3 and after reduction in hydrogen, is 2.62´1019 cm–3, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in thin films b–Ga2O3 after reduction in hydrogen is caused by Burstein-Moss effect.

scholarly journals Edge Absorption of (Y0.06Ga0.94)2O3 Thin Films

2017 ◽  
Vol 18 (1) ◽  
pp. 89-93
Author(s):  
O.M. Bordun ◽  
I.Yo. Kukharskyy ◽  
I.I. Medvid ◽  
Zh.Ya. Tsapovska
Keyword(s):  
Thin Films ◽  
Absorption Edge ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Hydrogen Atmosphere ◽  
Argon Atmosphere ◽  
Charge Carriers ◽  
Oxygen Atmosphere ◽  
Free Charge ◽  
Monoclinic Structure

Fundamental absorption edge of (Y0,06Ga0,94)2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed in the monoclinic structure of β-Ga2O3. The optical band gap of these films is greater than β-Ga2O3 films and is 4.66 eB for films annealed in oxygen atmosphere, 4.77 eV for the films annealed in argon atmosphere and 4.87 eV for the films, restored in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in (Y0,06Ga0,94)2O3 films after annealing and after reconstitution in hydrogen was estimated. It was found that the concentration of charge carriers after annealing in oxygen atmosphere is 1.32×1018 cm-3, after annealing in argon atmosphere - 3.41×1018 cm-3 and after reconstitution in hydrogen is 5.20×1018 cm-3, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in (Y0,06Ga0,94)2O3 thin films is caused by Burstein-Moss effect.

Photoferroelectric Phenomena in Sn2P2S6 Single Crystals and Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
E. Arnautova ◽  
N. Kosonogov ◽  
E. Rogach ◽  
A. Pavlov ◽  
N. Protsenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Single Crystals ◽  
Energy Levels ◽  
Charge Carriers ◽  
Free Charge

ABSTRACTTne present paper is devoted to the experimental study and the analysis of photoferroelectric phenomena in ferroelectric-semiconductor Sn2P2S6 crystals and films. These photoactive light-induced phenomena observed in polarized Sn2P2S6 samples are described by the model of screening the depoling field of remanent polarisation by free charge carriers fixed at the deep energy levels.

scholarly journals OBSERVATION OF REDUCTION IN CASIMIR FORCE WITHOUT CHANGE OF DIELECTRIC PERMITTIVITY

2012 ◽  
Vol 14 ◽  
pp. 1-15
Author(s):  
A. A. BANISHEV ◽  
C.-C. CHANG ◽  
R. CASTILLO-GARZA ◽  
G. L. KLIMCHITSKAYA ◽  
V. M. MOSTEPANENKO ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Casimir Force ◽  
Measurement Data ◽  
Theoretical Explanation ◽  
Charge Carriers ◽  
Free Charge ◽  
Good Agreement

Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au-coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory taking into account the free charge carriers in the indium tin oxide. The data for the UV-treated sample exclude the theoretical results obtained with account of free charge carriers. These data are found to be in a very good agreement with theory disregarding the free charge carriers in an indium tin oxide film. A possible theoretical explanation of our observations as a result of phase transition of indium tin oxide from metallic to dielectric state is discussed in comparison with other related experiments.

scholarly journals OBSERVATION OF REDUCTION IN CASIMIR FORCE WITHOUT CHANGE OF DIELECTRIC PERMITTIVITY

2012 ◽  
Vol 27 (15) ◽  
pp. 1260001 ◽  
Author(s):  
A. A. BANISHEV ◽  
C.-C. CHANG ◽  
R. CASTILLO-GARZA ◽  
G. L. KLIMCHITSKAYA ◽  
V. M. MOSTEPANENKO ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Casimir Force ◽  
Measurement Data ◽  
Theoretical Explanation ◽  
Charge Carriers ◽  
Free Charge ◽  
Good Agreement

Additional information is provided on the effect of the significant (up to 35%) reduction in the magnitude of the Casimir force between an Au -coated sphere and an indium tin oxide film which was observed after UV treatment of the latter. A striking feature of this effect is that the reduction is not accompanied with a corresponding variation of the dielectric permittivity, as confirmed by direct ellipsometry measurements. The measurement data are compared with computations using the Lifshitz theory. It is shown that the data for the untreated sample are in a very good agreement with theory taking into account the free charge carriers in the indium tin oxide. The data for the UV-treated sample exclude the theoretical results obtained with account of free charge carriers. These data are found to be in a very good agreement with theory disregarding the free charge carriers in an indium tin oxide film. A possible theoretical explanation of our observations as a result of phase transition of indium tin oxide from metallic to dielectric state is discussed in comparison with other related experiments.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films
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