Image based in situ electron-beam drift detection by silicon photodiodes in scanning-electron microscopy and an electron-beam lithography system

2013 ◽  
Vol 103 ◽  
pp. 137-143 ◽  
Author(s):  
Yi-Hung Kuo ◽  
Cheng-Ju Wu ◽  
Fu-Tsun Kuo ◽  
Jia-Yush Yen ◽  
Yung-Yaw Chen
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography System ◽  
Scanning Electron

Effect of Silanization Film Thickness in Soft Lithography of Nanoscale Features

2011 ◽  
Vol 2 (4) ◽  
Author(s):  
Lucas H. Ting ◽  
Shirin Feghhi ◽  
Sangyoon J. Han ◽  
Marita L. Rodriguez ◽  
Nathan J. Sniadecki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Soft Lithography ◽  
Critical Parameter ◽  
Lithography Process ◽  
Fluorinated Silane ◽  
Nanoscale Features ◽  
Scanning Electron

Soft lithography was used to replicate nanoscale features made using electron beam lithography on a polymethylmethacrylate (PMMA) master. The PMMA masters were exposed to fluorinated silane vapors to passivate its surfaces so that polydimethylsiloxane (PDMS) did not permanently bond to the master. From scanning electron microscopy, the silanization process was found to deposit a coating on the master that was a few hundreds of nanometers thick. These silane films partially concealed the nanoscale holes on the PMMA master, causing the soft lithography process to produce PDMS features with dimensions that were significantly reduced. The thickness of the silane films was directly measured on silicon or PMMA masters and was found to increase with exposure time to silane vapors. These findings indicate that the thickness of the silane coatings is a critical parameter when using soft lithography to replicate nanoscale features, and caution should be taken on how long a master is exposed to silane vapors.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

High-Resolution Resistance Mapping in SEM

2018 ◽  
Author(s):  
Grigore Moldovan ◽  
Wolfgang Joachimi ◽  
Guillaume Boetsch ◽  
Jörg Jatzkowski ◽  
Frank Altman
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Reference Structure ◽  
Total Resistance ◽  
Embedded Electronics ◽  
Improved Performance ◽  
Mapping Techniques ◽  
Scanning Electron

Abstract This work presents advanced resistance mapping techniques based on Scanning Electron Microscopy (SEM) with nanoprobing systems and the related embedded electronics. Focus is placed on recent advances to reduce noise and increase speed, such as integration of dedicated in situ electronics into the nanoprobing platform, as well as an important transition from current-sensitive to voltagesensitive amplification. We show that it is now possible to record resistance maps with a resistance sensitivity in the 10W range, even when the total resistance of the mapped structures is in the range of 100W. A reference structure is used to illustrate the improved performance, and a lowresistance failure case is presented as an example of analysis made possible by these developments.

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