Silicon photodiodes for low-voltage electron detection in scanning electron microscopy and electron beam lithography

2006 ◽  
Vol 24 (6) ◽  
pp. 2951 ◽  
Author(s):  
C. S. Silver ◽  
J. P. Spallas ◽  
L. P. Muray
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Voltage ◽  
Voltage Electron ◽  
Electron Detection ◽  
Scanning Electron

Effect of Silanization Film Thickness in Soft Lithography of Nanoscale Features

2011 ◽  
Vol 2 (4) ◽  
Author(s):  
Lucas H. Ting ◽  
Shirin Feghhi ◽  
Sangyoon J. Han ◽  
Marita L. Rodriguez ◽  
Nathan J. Sniadecki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Soft Lithography ◽  
Critical Parameter ◽  
Lithography Process ◽  
Fluorinated Silane ◽  
Nanoscale Features ◽  
Scanning Electron

Soft lithography was used to replicate nanoscale features made using electron beam lithography on a polymethylmethacrylate (PMMA) master. The PMMA masters were exposed to fluorinated silane vapors to passivate its surfaces so that polydimethylsiloxane (PDMS) did not permanently bond to the master. From scanning electron microscopy, the silanization process was found to deposit a coating on the master that was a few hundreds of nanometers thick. These silane films partially concealed the nanoscale holes on the PMMA master, causing the soft lithography process to produce PDMS features with dimensions that were significantly reduced. The thickness of the silane films was directly measured on silicon or PMMA masters and was found to increase with exposure time to silane vapors. These findings indicate that the thickness of the silane coatings is a critical parameter when using soft lithography to replicate nanoscale features, and caution should be taken on how long a master is exposed to silane vapors.

Low voltage SEM, Auger, and XPS of surface contaminants

1984 ◽  
Vol 42 ◽  
pp. 458-459
Author(s):  
E.K. Brandis ◽  
J. DeStafeno ◽  
R. Flitsch ◽  
R. Landenberger
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Low Voltage ◽  
Incident Beam ◽  
Circuit Testing ◽  
Surface Contaminants ◽  
Width Measurements ◽  
Scientific Endeavor ◽  
Scanning Electron

Scanning electron microscopy has been successfully applied in nearly all fields of scientific endeavor. In most cases, the desired information was obtained operating the SEM with beam energies ranging from 10-30 KeV. Recently, with the advent of SEMs specially designed for operation at low beam energies, it became practical to perform analysis with low beam energies. In the field of semiconductors, to avoid charging the surface by the incident beam, the use of selected low beam energies became mandatory for circuit testing and photoresist line width measurements. In the field of materials analysis, occasional use of low electron beam energies was made, in which surface details were highlighted. With lower beam energies, the penetration of the electron beam is reduced and the interaction of the beam with surface features becomes more pronounced. In the past, widespread utilization of this mode of scanning electron microscopy was not practical because most SEMs had a severely reduced spatial resolution at beam energies of less than 5 KeV.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Low-voltage, high-resolution scanning electron microscopy of polymers

1987 ◽  
Vol 45 ◽  
pp. 466-467 ◽  
Author(s):  
S. J. Krause ◽  
W.W. Adams ◽  
S. Kumar ◽  
T. Reilly ◽  
T. Suziki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Resolution Limit ◽  
Crossover Point ◽  
New Generation ◽  
Beam Damage ◽  
Scanning Electron

Scanning electron microscopy (SEM) of polymers at routine operating voltages of 15 to 25 keV can lead to beam damage and sample image distortion due to charging. Imaging polymer samples with low accelerating voltages (0.1 to 2.0 keV), at or near the “crossover point”, can reduce beam damage, eliminate charging, and improve contrast of surface detail. However, at low voltage, beam brightness is reduced and image resolution is degraded due to chromatic aberration. A new generation of instruments has improved brightness at low voltages, but a typical SEM with a tungsten hairpin filament will have a resolution limit of about 100nm at 1keV. Recently, a new field emission gun (FEG) SEM, the Hitachi S900, was introduced with a reported resolution of 0.8nm at 30keV and 5nm at 1keV. In this research we are reporting the results of imaging coated and uncoated polymer samples at accelerating voltages between 1keV and 30keV in a tungsten hairpin SEM and in the Hitachi S900 FEG SEM.

Novel Approaches to Low-Voltage Scanning Electron Microscopy

1990 ◽  
Vol 48 (1) ◽  
pp. 366-367
Author(s):  
Arthur V. Jones
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Electron Optics ◽  
Current Interest ◽  
New Concepts ◽  
Opportune Time ◽  
Novel Approaches ◽  
Voltage Scanning ◽  
Scanning Electron

In comparison with the developers of other forms of instrumentation, scanning electron microscope manufacturers are among the most conservative of people. New concepts usually must wait many years before being exploited commercially. The field emission gun, developed by Albert Crewe and his coworkers in 1968 is only now becoming widely available in commercial instruments, while the innovative lens designs of Mulvey are still waiting to be commercially exploited. The associated electronics is still in general based on operating procedures which have changed little since the original microscopes of Oatley and his co-workers.The current interest in low-voltage scanning electron microscopy will, if sub-nanometer resolution is to be obtained in a useable instrument, lead to fundamental changes in the design of the electron optics. Perhaps this is an opportune time to consider other fundamental changes in scanning electron microscopy instrumentation.

Imaging of polymer single crystals in low-voltage, high-resolution scanning electron microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 1106-1107
Author(s):  
W.W. Adams ◽  
G. Price ◽  
A. Krause
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Single Crystals ◽  
Low Voltage ◽  
Polymer Surface ◽  
Beam Current ◽  
Image Features ◽  
First Results ◽  
Scanning Electron

It has been shown that there are numerous advantages in imaging both coated and uncoated polymers in scanning electron microscopy (SEM) at low voltages (LV) from 0.5 to 2.0 keV compared to imaging at conventional voltages of 10 to 20 keV. The disadvantages of LVSEM of degraded resolution and decreased beam current have been overcome with the new generation of field emission gun SEMs. In imaging metal coated polymers in LVSEM beam damage is reduced, contrast is improved, and charging from irregularly shaped features (which may be unevenly coated) is reduced or eliminated. Imaging uncoated polymers in LVSEM allows direct observation of the surface with little or no charging and with no alterations of surface features from the metal coating process required for higher voltage imaging. This is particularly important for high resolution (HR) studies of polymers where it is desired to image features 1 to 10 nm in size. Metal sputter coating techniques produce a 10 - 20 nm film that has its own texture which can obscure topographical features of the original polymer surface. In examining thin, uncoated insulating samples on a conducting substrate at low voltages the effect of sample-beam interactions on image formation and resolution will differ significantly from the effect at higher accelerating voltages. We discuss here sample-beam interactions in single crystals on conducting substrates at low voltages and also present the first results on HRSEM of single crystal morphologies which show some of these effects.

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