Electric field used as the substitute for ultrasounds in the liquid exfoliation of hexagonal boron nitride

2014 ◽  
Vol 126 ◽  
pp. 124-128 ◽  
Author(s):  
A. Sokołowska ◽  
J. Rudnicki ◽  
M. Kostecki ◽  
S. Wojtkiewicz ◽  
P. Sawosz ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Hexagonal Boron Nitride ◽  
Liquid Exfoliation

scholarly journals Терагерцовые дисперсия и усиление при стриминге электронов в графене при 300 K

2020 ◽  
Vol 54 (9) ◽  
pp. 888
Author(s):  
А.А. Андронов ◽  
В.И. Позднякова
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Terahertz Radiation ◽  
High Resistance ◽  
Applied Voltage ◽  
Momentum Space ◽  
Hexagonal Boron Nitride ◽  
Strong Electric Field ◽  
Microwave Generator ◽  
Time Frequency

Abstract We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).

Tuning Electronic and Structural Properties of Triple Layers of Intercalated Graphene and Hexagonal Boron Nitride: An Ab-initio Study.

2011 ◽  
Vol 1307 ◽  
Author(s):  
Samir S. Coutinho ◽  
David L. Azevedo ◽  
Douglas S. Galvão
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Ab Initio ◽  
Band Gap ◽  
External Electric Field ◽  
Structural Properties ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Electronic And Structural Properties ◽  
Gap Values

ABSTRACTRecently, several experiments and theoretical studies demonstrated the possibility of tuning or modulating band gap values of nanostructures composed of bi-layer graphene, bi-layer hexagonal boron-nitride (BN) and hetero-layer combinations. These triple layers systems present several possibilities of stacking. In this work we report an ab initio (within the formalism of density functional theory (DFT)) study of structural and electronic properties of some of these stacked configurations. We observe that an applied external electric field can alter the electronic and structural properties of these systems. With the same value of the applied electric field the band gap values can be increased or decreased, depending on the layer stacking sequences. Strong geometrical deformations were observed. These results show that the application of an external electric field perpendicular to the stacked layers can effectively be used to modulate their inter-layer distances and/or their band gap values.

Influence of Electric Field on the Mechanical Properties of Hexagonal Boron-Nitride Sheets Using ab-initio Calculations

NANO ◽  
2015 ◽  
Vol 10 (03) ◽  
pp. 1550047 ◽  
Author(s):  
R. Ansari ◽  
S. Malakpour ◽  
M. Faghihnasiri ◽  
S. Ajori
Keyword(s):  
Mechanical Properties ◽  
Boron Nitride ◽  
Electric Field ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
High Sensitivity ◽  
Functional Theory ◽  
Zigzag Direction ◽  
Electric Filed ◽  
Armchair Direction

In some cases such as assembling nanodevices and nanobiosensing, the effect of electric filed on the mechanical properties of nanomaterials is important and should be taken into account. The aim of this work is to investigate the effect of electric field on the mechanical properties of hexagonal boron-nitride (h-BN) using density functional theory (DFT) calculations. The results show the high sensitivity of mechanical properties to the magnitude and direction of electric field. It is observed that imposing the electric field on the armchair direction, unlike the zigzag direction, increases the magnitude of elastic properties of h-BN especially in the case of Poisson's ratio. It is further observed that the electric field perpendicular to h-BN has a negligible effect on its mechanical properties.

Unipolar Switching Behavior in Highly Crystalline Hexagonal Boron Nitride

2014 ◽  
Vol 1658 ◽  
Author(s):  
Nikhil Jain ◽  
Robin B. Jacobs-Gedrim ◽  
Bin Yu
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Hexagonal Boron Nitride ◽  
Electrical Characterization ◽  
Information Storage ◽  
Switching Behavior ◽  
Reconfigurable Logic ◽  
Substitutional Doping ◽  
Capacitance Voltage

ABSTRACTWe observed resistive switching in highly crystalline layered insulator hexagonal boron nitride (h-BN) under electric field in a nano-device configuration. Two distinct resistive states were observed in the 2D material heterostack. Electrical characterization using capacitance-voltage approach further revealed the role of h-BN as the active switching element. The switching behavior could be attributed to substitutional doping of h-BN under electric field present in the active region, possibly resulting in the formation of multi-element complex in which electrical conductivity depends on the amount of substituted dopant in the boron nitride crystal lattice. Since switching is observed independent of the direction of electric field, it is unipolar in nature. The observed memristance phenomenon in layered insulator may be potentially used in the form of NVM, providing possible direction to implement information storage or reconfigurable logic applications.

Efficient dispersant-free liquid exfoliation down to the graphene-like state of solvent-free mechanochemically delaminated bulk hexagonal boron nitride

RSC Advances ◽  
2016 ◽  
Vol 6 (52) ◽  
pp. 47112-47119 ◽  
Author(s):  
Oleg Yu. Posudievsky ◽  
Oleksandra A. Khazieieva ◽  
Vsevolod V. Cherepanov ◽  
Galina I. Dovbeshko ◽  
Vyacheslav G. Koshechko ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Solvent Free ◽  
Liquid Exfoliation

Efficient dispersant-free liquid exfoliation down to the graphene-like state of solvent-free mechanochemically delaminated bulk hexagonal boron nitride was shown.

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