Structural parameters affecting the performance of non-volatile memory based on organic field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2018.11.004 ◽

2019 ◽

Vol 203-204 ◽

pp. 31-37 ◽

Author(s):

Lin Gong ◽

Holger Göbel

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Structural Parameters ◽

Organic Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory

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UV assisted non-volatile memory behaviour using Copper (II) phthalocyanine based organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2021.106174 ◽

2021 ◽

Vol 94 ◽

pp. 106174

Author(s):

Ajay Kumar Mahato ◽

Deepak Bharti ◽

Ishan Varun ◽

Pulkit Saxena ◽

Vivek Raghuwanshi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory

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Organic Field-Effect Transistors: Single-Crystal C60 Needle/CuPc Nanoparticle Double Floating-Gate for Low-Voltage Organic Transistors Based Non-Volatile Memory Devices (Adv. Mater. 1/2015)

Advanced Materials ◽

10.1002/adma.201570002 ◽

2015 ◽

Vol 27 (1) ◽

pp. 2-2 ◽

Author(s):

Hsuan-Chun Chang ◽

Chien Lu ◽

Cheng-Liang Liu ◽

Wen-Chang Chen

Keyword(s):

Single Crystal ◽

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

Floating Gate ◽

Organic Transistors ◽

Memory Devices ◽

Organic Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory

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Tuning non-volatile memory characteristics via molecular doping of polymer semiconductors based on ambipolar organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2018.03.043 ◽

2018 ◽

Vol 58 ◽

pp. 12-17 ◽

Author(s):

Minji Kang ◽

Dongyoon Khim ◽

Jihong Kim ◽

Hyeon Jun Lee ◽

Ji Young Jo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Polymer Semiconductors ◽

Non Volatile Memory ◽

Molecular Doping ◽

Volatile Memory ◽

Memory Characteristics

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Inkjet-Patterned Organic Complementary Circuits and Non-Volatile Memory Arrays Based on Ferroelectric Field-Effect Transistors

ECS Meeting Abstracts ◽

10.1149/ma2010-02/29/1811 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory ◽

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Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2016.07.025 ◽

2016 ◽

Vol 124 ◽

pp. 16-23 ◽

Author(s):

A. Saeidi ◽

A. Biswas ◽

Adrian M. Ionescu

Keyword(s):

Low Power ◽

Modeling And Simulation ◽

Hafnium Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory ◽

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Progress of flexible organic non-volatile memory field-effect transistors

Acta Physica Sinica ◽

10.7498/aps.63.027302 ◽

2014 ◽

Vol 63 (2) ◽

pp. 027302

Author(s):

Chai Yu-Hua ◽

Guo Yu-Xiu ◽

Bian Wei ◽

Li Wen ◽

Yang Tao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory

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Correction: Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Journal of Materials Chemistry C ◽

10.1039/c8tc90155d ◽

2018 ◽

Vol 6 (31) ◽

pp. 8555-8555

Author(s):

Md. Shafiqur Rahman ◽

Susmita Ghose ◽

Liang Hong ◽

Pradip Dhungana ◽

Abbas Fahami ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Non Volatile Memory ◽

Volatile Memory

Correction for ‘Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors’ by Md. Shafiqur Rahman et al., J. Mater. Chem. C, 2016, 4, 10386–10394.

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Non‐volatile memory operation in normally‐off GaN MOS heterostructure field effect transistors with thin AlGaN barrier

Electronics Letters ◽

10.1049/el.2015.4258 ◽

2016 ◽

Vol 52 (8) ◽

pp. 661-663

Author(s):

D. Keum ◽

K. Cho ◽

H. Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Algan Barrier ◽

Non Volatile Memory ◽

Heterostructure Field Effect Transistors ◽

Volatile Memory

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Single-Wall Carbon Nanotube Field Effect Transistors with Non-Volatile Memory Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l1036 ◽

2006 ◽

Vol 45 (No. 38) ◽

pp. L1036-L1038 ◽

Author(s):

Tatsuya Sakurai ◽

Takeshi Yoshimura ◽

Seiji Akita ◽

Norifumi Fujimura ◽

Yoshikazu Nakayama

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Single Wall Carbon Nanotube ◽

Single Wall Carbon ◽

Non Volatile Memory ◽

Volatile Memory

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ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application

physica status solidi (a) ◽

10.1002/pssa.201330499 ◽

2014 ◽

Vol 211 (8) ◽

pp. 1912-1916

Author(s):

Myeongwon Lee ◽

Youngin Jeon ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Plastic Substrate ◽

Zno Nanowire ◽

Non Volatile Memory ◽

Volatile Memory ◽

Pt Nanocrystals ◽

Flexible Plastic Substrate

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