Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

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In situ STM imaging of spontaneously deposited ruthenium on Au()

Surface Science ◽

10.1016/s0039-6028(02)02062-9 ◽

2002 ◽

Vol 517 (1-3) ◽

pp. 207-218 ◽

Cited By ~ 23

Author(s):

S Strbac ◽

R.J Behm ◽

A Crown ◽

A Wieckowski

Keyword(s):

In Situ Stm

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In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

MRS Proceedings ◽

10.1557/proc-502-237 ◽

1997 ◽

Vol 502 ◽

Cited By ~ 4

Author(s):

Dave H. A. Blank ◽

Horst Rogalla

Keyword(s):

Thin Films ◽

High Pressures ◽

High Vacuum ◽

Pulsed Laser ◽

Complex Oxide ◽

High Energy ◽

Diagnostic Tools ◽

Heteroepitaxial Growth ◽

Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

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Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

MRS Proceedings ◽

10.1557/proc-222-75 ◽

1991 ◽

Vol 222 ◽

Cited By ~ 10

Author(s):

B. Johs ◽

J. L. Edwards ◽

K. T. Shiralagi ◽

R. Droopad ◽

K. Y. Choi ◽

...

Keyword(s):

Real Time ◽

Optical Constants ◽

Growth Parameters ◽

Ex Situ ◽

Time Analysis ◽

Mbe Growth ◽

In Situ Data ◽

Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

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