Two dimensional analytical modeling for asymmetric 3T and 4T double gate tunnel FET in sub-threshold region: Potential and electric field

Menka Yadav; Anand Bulusu; Sudeb Dasgupta

doi:10.1016/j.mejo.2013.08.011

Two dimensional analytical modeling for asymmetric 3T and 4T double gate tunnel FET in sub-threshold region: Potential and electric field

Microelectronics Journal ◽

10.1016/j.mejo.2013.08.011 ◽

2013 ◽

Vol 44 (12) ◽

pp. 1251-1259 ◽

Cited By ~ 26

Author(s):

Menka Yadav ◽

Anand Bulusu ◽

Sudeb Dasgupta

Keyword(s):

Electric Field ◽

Analytical Modeling ◽

Threshold Region ◽

Double Gate ◽

Two Dimensional ◽

Tunnel Fet

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A 2-D Double Gate Heterojunction Tunnel-FET Based on AlGaSb/InAs: Analytical Analysis on Electric Field and Capacitance

10.1109/icsct53883.2021.9642561 ◽

2021 ◽

Author(s):

Sunjida Sultana ◽

Md. Tawfiq Amin ◽

Twisha Titirsha

Keyword(s):

Electric Field ◽

Double Gate ◽

Analytical Analysis ◽

Tunnel Fet

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A Two-Dimensional (2D) Analytical Modeling and Improved Short Channel Performance of Graded-Channel Gate-Stack (GCGS) Dual-Material Double-Gate (DMDG) MOSFET

Silicon ◽

10.1007/s12633-017-9683-1 ◽

2018 ◽

Vol 10 (6) ◽

pp. 2399-2407 ◽

Cited By ~ 6

Author(s):

Narendar Vadthiya ◽

Shweta Tripathi ◽

R. Bhavani Shankar Naik

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Two Dimensional ◽

Gate Stack ◽

Short Channel ◽

Channel Gate ◽

Channel Performance ◽

Dual Material

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Analytical modeling and simulation of two dimensional double gate nanoscale SOI MOSFET

2013 7th International Conference on Intelligent Systems and Control (ISCO) ◽

10.1109/isco.2013.6481166 ◽

2013 ◽

Author(s):

Ravindra Singh Kushwah ◽

Shyam Akashe

Keyword(s):

Modeling And Simulation ◽

Analytical Modeling ◽

Double Gate ◽

Two Dimensional ◽

Soi Mosfet

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Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

Silicon ◽

10.1007/s12633-020-00474-6 ◽

2020 ◽

Author(s):

Ritam Dutta ◽

Nitai Paitya ◽

T. D. Subash

Keyword(s):

Electric Field ◽

Surface Potential ◽

Analytical Modeling ◽

Double Gate

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Analytical Drain Current Model for Super-Threshold Region of Double Gate Tunnel FET

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) ◽

10.1109/vlsidcs47293.2020.9179867 ◽

2020 ◽

Author(s):

Joy Chowdhury ◽

Angsuman Sarkar ◽

Kamalakanta Mahapatra ◽

J. K. Das

Keyword(s):

Current Model ◽

Drain Current ◽

Threshold Region ◽

Double Gate ◽

Tunnel Fet

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Two-dimensional model for asymmetric double-gate tunnel FET considering the source-channel junction depletion region

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2015.7158548 ◽

2015 ◽

Author(s):

Hongfei Lv ◽

Shingo Sato ◽

Yasuhisa Omura ◽

Abhijit Mallik

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunnel Fet ◽

Two Dimensional Model

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A Two Dimensional Analytical Model of Heterostructure Double Gate with Pocket Doped Tunnel FET

Silicon ◽

10.1007/s12633-019-00232-3 ◽

2019 ◽

Vol 12 (6) ◽

pp. 1391-1397

Author(s):

Krishna Dharavath ◽

Adla Vinod

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Tunnel Fet

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Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-020-01496-4 ◽

2020 ◽

Vol 19 (3) ◽

pp. 1154-1163 ◽

Cited By ~ 1

Author(s):

Shailendra Singh ◽

Balwinder Raj

Keyword(s):

Surface Potential ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Surface Potential and Drain Current 2D Analytical Modeling of Low Power Double Gate Tunnel FET

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-021-00298-0 ◽

2021 ◽

Author(s):

Dhruv Garg ◽

Girish Wadhwa ◽

Shailendra Singh ◽

Ashish Raman ◽

Balwinder Raj

Keyword(s):

Low Power ◽

Surface Potential ◽

Analytical Modeling ◽

Drain Current ◽

Double Gate ◽

Tunnel Fet

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Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

Journal of Computational Electronics ◽

10.1007/s10825-017-1089-1 ◽

2017 ◽

Vol 17 (1) ◽

pp. 172-180 ◽

Cited By ~ 2

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Strained Silicon ◽

Double Gate ◽

Two Dimensional ◽

Gate Stack ◽

High K

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