Quantitative in-situ TEM nanotensile testing of single crystal Ni facilitated by a new sample preparation approach

AbstractThe domain structure and the evolution of antiphase boundaries (APBs) have been investigated in Fe-Al by means of “in-situ” transmission electron microscopy (TEM) heating experiments. Single crystals with composition Fe22.1at%Al and Fe25.6at%Al have been used.The grown-in structure of the Fe22.1at%al single crystal is composed of DO3 ordered particles embedded in the disorderd ±-matrix. A bimodal distribution of the particles was found. Small ordered particles are in between the large precipitates which are surrounded by particle-free zones. Numerous of this large ordered precipitates contain APBs. Crossing the transition temperature to the disordered phase, the small particles dissolve into the ±-matrix and the large particles start to shrink by dissolving.The single crystal with composition Fe25.6at%Al was found to be completely DO3 ordered. The grown-in domains are separated by APBs of type a′0/2〈100〉. At temperatures far below the transition temperature to the B2 phase no significant change in the APB and domain structure has been detected. In contrast, a remarkable evolution in the APB structure has been observed approaching the transition temperature. Coarsening of the domains has been found. Furthermore, APBs of B2-type (a′0/4〈lll〉 shear) are dragged out by dislocation motion. B2- and DC3-type APBs react and junctions are formed. With increasing annealing time, the density of B2-type boundaries increases. The TEM image is dominated by B2-type boundaries linked by the D03-type boundaries. The DO3 superlattice spots are clearly excited approaching the transition temperature to B2. Above the transition temperature, the DO3 spots disappear completely and the diffraction pattern reveals B2 long range order.

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T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

The proceedings of the JSME annual meeting ◽

10.1299/jsmemecjo.2010.8.0_263 ◽

2010 ◽

Vol 2010.8 (0) ◽

pp. 263-264

Author(s):

Taeko ANDO ◽

Hidekazu Ishihara ◽

Masahiro Nakajima ◽

Shigeo Arai ◽

Toshio Fukuda ◽

...

Keyword(s):

Thin Film ◽

Single Crystal ◽

Tensile Testing ◽

Single Crystal Silicon ◽

In Situ Tem ◽

Silicon Thin Film ◽

Crystal Silicon

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The Total Release Method for FIB In-situ TEM Sample Preparation

Microscopy and Microanalysis ◽

10.1017/s1431927605506123 ◽

2005 ◽

Vol 11 (S02) ◽

Cited By ~ 5

Author(s):

L Zaykova-Feldman ◽

T M Moore

Keyword(s):

Sample Preparation ◽

In Situ Tem ◽

Release Method

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Fast Preparation of Ultrathin FIB Lamellas for MEMs-Based In Situ TEM Experiments

Materials Science Forum ◽

10.4028/www.scientific.net/msf.850.722 ◽

2016 ◽

Vol 850 ◽

pp. 722-727 ◽

Cited By ~ 2

Author(s):

Hui Wang ◽

Shang Gang Xiao ◽

Qiang Xu ◽

Tao Zhang ◽

Henny Zandbergen

Keyword(s):

Sample Preparation ◽

Focused Ion Beam ◽

Preparation Method ◽

Ion Beam ◽

Metallic Alloy ◽

In Situ Tem ◽

Ion Milling ◽

Electrochemical Polishing ◽

Argon Ion

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.

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Double shadow masking sample preparation method for in‐situ TEM characterization

Nano Select ◽

10.1002/nano.202000063 ◽

2020 ◽

Vol 1 (4) ◽

pp. 413-418

Author(s):

Carmel Mary Esther Alphonse ◽

Mohan Muralikrishna Garlapati ◽

Sven Hilke ◽

Gerhard Wilde

Keyword(s):

Sample Preparation ◽

Preparation Method ◽

In Situ Tem ◽

Sample Preparation Method ◽

Tem Characterization

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In-situ TEM study of dislocation patterning during deformation in single crystal aluminum

Journal of Physics Conference Series ◽

10.1088/1742-6596/241/1/012060 ◽

2010 ◽

Vol 241 ◽

pp. 012060 ◽

Cited By ~ 3

Author(s):

P Landau ◽

R Z Shneck ◽

G Makov ◽

A Venkert

Keyword(s):

Single Crystal ◽

In Situ Tem

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Probe Tip Replacement System Inside the FIB

MRS Proceedings ◽

10.1557/proc-983-0983-ll05-07 ◽

2006 ◽

Vol 983 ◽

Author(s):

Gonzalo Amador ◽

Lyudmila Zaykova-Feldman ◽

Thomas M Moore

Keyword(s):

Sample Preparation ◽

Processing Time ◽

Vacuum Chamber ◽

Semiconductor Industry ◽

In Situ Tem ◽

Sample Processing ◽

Time Efficiency ◽

Material Deposition ◽

Replacement System

AbstractThe in-situ lift-out method for TEM sample preparation, based on the use of a chamber-mounted nanomanipulator and FIB induced material deposition, has proven its effectiveness over the last several years. The time-efficiency introduced by this method is one reason for its success and rapid adoption within the semiconductor industry. Improvements to in-situ TEM lift-out preparation have been pursued to further improve sample processing time. One area targeted has involved methods to enable rapid in-situ probe tip replacement without having to remove the probe shaft from the vacuum chamber. This paper describes an in-situ probe tip replacement system that successfully solves this problem.

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Slip of c + a/2 Dislocations in Ti3Al Single Crystals Strained in Tension Along the C-Axis

MRS Proceedings ◽

10.1557/proc-460-237 ◽

1996 ◽

Vol 460 ◽

Cited By ~ 2

Author(s):

Y. Minonishi ◽

M. Legros ◽

D. Caillard

Keyword(s):

Single Crystal ◽

Single Crystals ◽

Slip Plane ◽

In Situ Tem ◽

Compression Tests

ABSTRACTIn situ TEM straining experiments have been performed on a Ti3Al single crystal, along the c-axis, in order to study the slip of 2c+a dislocations in pyramidal planes. The results show that slip takes place in π1 planes, in contrast with what has been observed after compression tests (slip in π2 planes), and that rows of loops are nucleated in the slip plane. The mechanisms which may control slip in the π1 planes are briefly discussed.

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