Slip of c + a/2 Dislocations in Ti3Al Single Crystals Strained in Tension Along the C-Axis

1996 ◽  
Vol 460 ◽  
Author(s):  
Y. Minonishi ◽  
M. Legros ◽  
D. Caillard
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Slip Plane ◽  
In Situ Tem ◽  
Compression Tests

ABSTRACTIn situ TEM straining experiments have been performed on a Ti3Al single crystal, along the c-axis, in order to study the slip of 2c+a dislocations in pyramidal planes. The results show that slip takes place in π1 planes, in contrast with what has been observed after compression tests (slip in π2 planes), and that rows of loops are nucleated in the slip plane. The mechanisms which may control slip in the π1 planes are briefly discussed.

scholarly journals In situ TEM oxidation study of Fe thin-film transformation to single-crystal magnetite nanoparticles

2020 ◽  
Vol 55 (27) ◽  
pp. 12897-12905
Author(s):  
Leonardo Lari ◽  
Stephan Steinhauer ◽  
Vlado K. Lazarov
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Magnetite Nanoparticles ◽  
In Situ Tem ◽  
Oxidation Study

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

Phase Transformations in the Fe-Al System Studied by “In-Situ” Tem Heating

1994 ◽  
Vol 364 ◽  
Author(s):  
A. Korner
Keyword(s):  
Transition Temperature ◽  
Single Crystal ◽  
Domain Structure ◽  
Type A ◽  
Bimodal Distribution ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Transmission Electron ◽  
The Matrix

AbstractThe domain structure and the evolution of antiphase boundaries (APBs) have been investigated in Fe-Al by means of “in-situ” transmission electron microscopy (TEM) heating experiments. Single crystals with composition Fe22.1at%Al and Fe25.6at%Al have been used.The grown-in structure of the Fe22.1at%al single crystal is composed of DO3 ordered particles embedded in the disorderd ±-matrix. A bimodal distribution of the particles was found. Small ordered particles are in between the large precipitates which are surrounded by particle-free zones. Numerous of this large ordered precipitates contain APBs. Crossing the transition temperature to the disordered phase, the small particles dissolve into the ±-matrix and the large particles start to shrink by dissolving.The single crystal with composition Fe25.6at%Al was found to be completely DO3 ordered. The grown-in domains are separated by APBs of type a′0/2〈100〉. At temperatures far below the transition temperature to the B2 phase no significant change in the APB and domain structure has been detected. In contrast, a remarkable evolution in the APB structure has been observed approaching the transition temperature. Coarsening of the domains has been found. Furthermore, APBs of B2-type (a′0/4〈lll〉 shear) are dragged out by dislocation motion. B2- and DC3-type APBs react and junctions are formed. With increasing annealing time, the density of B2-type boundaries increases. The TEM image is dominated by B2-type boundaries linked by the D03-type boundaries. The DO3 superlattice spots are clearly excited approaching the transition temperature to B2. Above the transition temperature, the DO3 spots disappear completely and the diffraction pattern reveals B2 long range order.

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon

In-Situ TEM Deformation Studies of Dislocation Generation and Motion in High-Purity MO Single Crystals

1999 ◽  
Vol 578 ◽  
Author(s):  
M. Jouiad ◽  
B. W. Lagow ◽  
I. M. Robertson ◽  
D. H. Lassila
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
High Purity ◽  
In Situ Tem ◽  
Dislocation Source ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Dislocation Tangle ◽  
Source Operation

AbstractThe generation and motion of dislocations in high-purity single crystals of Mo have been observed in real time by deforming electron-transparent samples in-situ in a transmission electron microscope. At 300 K and at low levels of stress, a novel dislocation source was observed that generated a long, straight screw dislocation. The source was a dislocation tangle that existed in the annealed material. An edge dislocation emerged from the tangle, trailing behind it the screw dislocation. These screw dislocations were immobile at this stress level. At higher stresses, the same dislocation tangle generated many dislocations, but now by a pole mechanism. The nature of these tangles and the source operation mechanisms will be described.

TEM studies of spots crystallized in amorphous films by electron beam

1992 ◽  
Vol 50 (2) ◽  
pp. 1348-1349
Author(s):  
V. Yu. Kolosov
Keyword(s):  
Electron Beam ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Central Zone ◽  
Lattice Orientation ◽  
Powerful Method ◽  
Amorphous Films ◽  
Explosive Crystallization

Electron beam (e-beam) annealing is powerful method for local modifying and crystallization in desired modes of semiconductors and microelectronics components and is also interesting for information storing. Nevertheless, discussed in many papers mechanism of explosive crystallization of amorphous (a-Ge, a-Si) films is still not clear enough and requires new structure studies. It is more relevant for recently discovered growing of micro-crystals with strong internal lattice bending (gradient crystals) in some amorphous films. This paper reports our findings in the structure of spots crystallized in these unusual modes by TEM beam in vacuum deposited (Ge, Se, Se-Te) or prepared by pyrolysis (Fe2O3) unsupported amorphous films. Bendcontour technique was used to analyze the fields of lattice orientation for gradient crystals, including in situ crystal growth studies or videorecord analysis.Explosively crystallized spots in a-Ge, a-Si films are known to consist of 3 zones, Fig. 1. We observed the same zones for films 400-800Å thick, deposited at rates 1- 100Å/s: polycrystal central zone (O), surrounded by a fan of radially elongated single crystals (zone R) which in turn is surrounded by zone (C), formed by concentric or spiral shells (each subdivided into single-crystal subshell and polycrystal subshell).

scholarly journals In-situ TEM study of dislocation patterning during deformation in single crystal aluminum

2010 ◽  
Vol 241 ◽  
pp. 012060 ◽  
Author(s):  
P Landau ◽  
R Z Shneck ◽  
G Makov ◽  
A Venkert
Keyword(s):  
Single Crystal ◽  
In Situ Tem
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