Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.026 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1351-1354

Author(s):

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Hyeokjin Kim ◽

Gang-Jun Kim ◽

Ji-Hoon Seo ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Download Full-text

New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2014.05.010 ◽

2014 ◽

Vol 54 (11) ◽

pp. 2378-2382 ◽

Author(s):

Miao Liao ◽

Zhenghao Gan

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Download Full-text

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of pMOSFET with High-k/Metal Gate Stacks

ECS Transactions ◽

10.1149/05201.0953ecst ◽

2013 ◽

Vol 52 (1) ◽

pp. 953-957 ◽

Author(s):

S. Ren ◽

H. Yang ◽

W. Wang ◽

H. Xu ◽

W. Luo ◽

...

Keyword(s):

Negative Bias ◽

Degradation Mechanisms ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Download Full-text

Negative Bias Temperature Instability Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation, HfO2 High-k Dielectric and TaN Metal Gate

ECS Meeting Abstracts ◽

10.1149/ma2012-02/43/3224 ◽

2012 ◽

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

Download Full-text

Fabrication and Negative Bias Temperature Instability (NBTI) Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate

ECS Transactions ◽

10.1149/05009.0949ecst ◽

2013 ◽

Vol 50 (9) ◽

pp. 949-956 ◽

Author(s):

X. Gong ◽

S. Su ◽

B. Liu ◽

L. Wang ◽

W. Wang ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Download Full-text

Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

Download Full-text

Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks

ECS Journal of Solid State Science and Technology ◽

10.1149/2.027309jss ◽

2013 ◽

Vol 2 (9) ◽

pp. Q187-Q191

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Gate Current ◽

Bias Stress ◽

Bias Temperature Instability

Download Full-text

Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2011.2157300 ◽

2011 ◽

Vol 32 (8) ◽

pp. 1017-1019

Author(s):

Jer-Chyi Wang ◽

Hsing-Kan Peng ◽

Chao-Sung Lai ◽

Pai-Chi Chou ◽

Min-Jer Lee

Keyword(s):

Ion Implantation ◽

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4773479 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012103 ◽

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Negative Bias Temperature Instability (NBTI) of pMOSFETs with Novel HfxMoyNz Metal Gate Electrodes

10.7567/ssdm.2008.p-1-18 ◽

2008 ◽

Author(s):

H. K. Peng ◽

C. S. Lai ◽

K. M. Fan ◽

S. J. Lin

Keyword(s):

Negative Bias ◽

Metal Gate Electrodes ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Gate Electrodes ◽

Bias Temperature Instability

Download Full-text