Effect of electron irradiation on morphological, compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics

2014 ◽  
Vol 54 (12) ◽  
pp. 2740-2746 ◽  
Author(s):  
Shounak De ◽  
B.S. Satyanarayana ◽  
Ganesh Sanjeev ◽  
K. Ramakrishna ◽  
K. Mohan Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Large Area ◽  
Carbon Thin Films ◽  
Cathodic Arc

Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications

2012 ◽  
Vol 38 ◽  
pp. S73-S77 ◽  
Author(s):  
Xiaohua Zhang ◽  
Wei Ren ◽  
Peng Shi ◽  
M. Saeed Khan ◽  
Xiaofeng Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Room Temperature ◽  
Embedded Capacitor

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Control of stress and delamination in single and multi-layer carbon thin films prepared by cathodic arc and RF plasma deposition and implantation

2006 ◽  
Vol 200 (22-23) ◽  
pp. 6405-6408 ◽  
Author(s):  
Peter C.T. Ha ◽  
D.R. McKenzie ◽  
M.M.M. Bilek ◽  
E.D. Doyle ◽  
D.G. McCulloch ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Carbon Thin Films ◽  
Cathodic Arc

scholarly journals Influence of Silver Incorporation on the Structural and Electrical Properties of Diamond-Like Carbon Thin Films

2013 ◽  
Vol 5 (7) ◽  
pp. 2725-2732 ◽  
Author(s):  
Neeraj Dwivedi ◽  
Sushil Kumar ◽  
J. David Carey ◽  
R. K. Tripathi ◽  
Hitendra K. Malik ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Diamond Like Carbon ◽  
Structural And Electrical Properties ◽  
Carbon Thin Films
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