Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation

2014 ◽  
Vol 54 (12) ◽  
pp. 2662-2667 ◽  
Author(s):  
Hajime Sasaki ◽  
Kaoru Kadoiwa ◽  
Hidetoshi Koyama ◽  
Yoshitaka Kamo ◽  
Yoshitsugu Yamamoto ◽  
...  
Keyword(s):  
Hot Carriers ◽  
Gate Current ◽  
Gan Hemts ◽  
Tcad Simulation ◽  
Defect Reaction

Gate Current Partitioning Model for Schottky Gate GaN HEMTs

2021 ◽  
Vol 68 (1) ◽  
pp. 425-429
Author(s):  
Ankur Debnath ◽  
Sujan Sarkar ◽  
Khade Ramdas Pandurang ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Gate Current ◽  
Gan Hemts

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

2017 ◽  
Vol 38 (4) ◽  
pp. 505-508 ◽  
Author(s):  
M. Fernandez ◽  
X. Perpina ◽  
J. Roig ◽  
M. Vellvehi ◽  
F. Bauwens ◽  
...  
Keyword(s):  
Short Circuit ◽  
Current Analysis ◽  
Gate Current ◽  
Gan Hemts

T-CAD simulations study on drain leakage current and its correlation with gate current for AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Cristina Miccoli ◽  
Viviana Cerantonio ◽  
Alessandro Chini ◽  
Ferdinando Iucolano
Keyword(s):  
Leakage Current ◽  
Gate Current ◽  
Gan Hemts

Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs

2015 ◽  
Vol 62 (2) ◽  
pp. 443-448 ◽  
Author(s):  
Sudip Ghosh ◽  
Avirup Dasgupta ◽  
Sourabh Khandelwal ◽  
Shantanu Agnihotri ◽  
Yogesh Singh Chauhan
Keyword(s):  
Surface Potential ◽  
Compact Modeling ◽  
Gate Current ◽  
Gan Hemts

scholarly journals Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 8055
Author(s):  
Alessandro Borghese ◽  
Alessandro Di Costanzo ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Comparative Study ◽  
Available P ◽  
Temperature Sensitive ◽  
Experimental Measurements ◽  
Gate Current ◽  
Sensitive Parameter ◽  
Channel Temperature ◽  
Gate Driver ◽  
Gan Hemts ◽  
Gate Driving

In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.

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