Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films

2018 ◽  
Vol 88-90 ◽  
pp. 829-834 ◽  
Author(s):  
F. Saghaeian ◽  
J. Keckes ◽  
K.A. Schreiber ◽  
T. Mittereder
1976 ◽  
Vol 32 (2) ◽  
pp. 185-190 ◽  
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
G. Honjo

2020 ◽  
Vol 167 (11) ◽  
pp. 112505
Author(s):  
T. Wiegmann ◽  
J. Drnec ◽  
F. Reikowski ◽  
J. Stettner ◽  
F. Maroun ◽  
...  

1985 ◽  
Vol 48 ◽  
Author(s):  
J. Bloch ◽  
M. Heiblum

ABSTRACTNolybenum and tungsten metals have been grown on an MBE grown (100)GaAs at various substrate temperatures. RHEED technique was used in situ to analyse the crystalline structure and the growth mechanism of the mechanism of the thin metal films. It was found that Mo epilayers can be grown on the (100) GaAs at temperatures between 150–400°C. The epitaxal arrangement is (111)Mo || (100)GaAs with [011]Mo || [011] GaAs. Tungsten films are not growing epitaxially under similar experimental conditions.


2020 ◽  
Vol 1461 ◽  
pp. 012193 ◽  
Author(s):  
D I Yakubovsky ◽  
A V Arsenin ◽  
R V Kirtaev ◽  
G A Ermolaev ◽  
Y S Stebunov ◽  
...  

Author(s):  
Alexander V. Tikhonravov ◽  
Michael K. Trubetskov ◽  
Oleg F. Prosovskiy ◽  
Michael A. Kokarev

1978 ◽  
Vol 50 (13) ◽  
pp. 1752-1757 ◽  
Author(s):  
D. V. Duchane ◽  
R. D. Sacks

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