Improving avalanche robustness of SiC MOSFETs by optimizing three-region P-well doping profile

2021 ◽  
Vol 124 ◽  
pp. 114332
Author(s):  
Zhiqiang Bai ◽  
Xiaoyan Tang ◽  
Yanjing He ◽  
Hao Yuan ◽  
Qingwen Song ◽  
...  
Keyword(s):  
Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.


1987 ◽  
Vol 50 (20) ◽  
pp. 1435-1437 ◽  
Author(s):  
Naoki Kobayashi ◽  
Toshiki Makimoto ◽  
Yoshiji Horikoshi

Author(s):  
N. Rouger

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.


2011 ◽  
Vol 8 (7-8) ◽  
pp. 2072-2074 ◽  
Author(s):  
Richard Gutt ◽  
Klaus Köhler ◽  
Joachim Wiegert ◽  
Lutz Kirste ◽  
Thorsten Passow ◽  
...  

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4375-4377 ◽  
Author(s):  
Young Min Park ◽  
Young Ju Park ◽  
Kwang Moo Kim ◽  
Jae Cheol Shin ◽  
Eun Kyu Kim ◽  
...  

1980 ◽  
Vol 23 (1) ◽  
pp. 65-71 ◽  
Author(s):  
G. Baccarani ◽  
M. Rudan ◽  
G. Spadini ◽  
H. Maes ◽  
W. Vandervorst ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document