Insights into the enhanced thermal stability of lysozyme with altered structure and activity induced by choline chloride-based deep eutectic solvents containing polyols and sugars

2021 ◽  
pp. 118143
Author(s):  
Keunbae Park ◽  
Bo Young Ham ◽  
Ke Li ◽  
Seulgi Kang ◽  
Dasom Jung ◽  
...  
2018 ◽  
Vol 260 ◽  
pp. 37-43 ◽  
Author(s):  
Noemí Delgado-Mellado ◽  
Marcos Larriba ◽  
Pablo Navarro ◽  
Victoria Rigual ◽  
Miguel Ayuso ◽  
...  

2020 ◽  
Vol 22 (42) ◽  
pp. 24410-24422
Author(s):  
Kavya Bhakuni ◽  
Niketa Yadav ◽  
Pannuru Venkatesu

This study unravels the effect of a novel solvent medium designed by amalgamation of macromolecular crowders and deep eutectic solvents (DESs) on bovine serum albumin (BSA).


2019 ◽  
Vol 7 (15) ◽  
pp. 12682-12687 ◽  
Author(s):  
Jennifer A. Kist ◽  
Michael T. Henzl ◽  
José L. Bañuelos ◽  
Gary A. Baker

2020 ◽  
Vol 8 (27) ◽  
pp. 10151-10160 ◽  
Author(s):  
Niketa Yadav ◽  
Kavya Bhakuni ◽  
Meena Bisht ◽  
Indra Bahadur ◽  
Pannuru Venkatesu

2018 ◽  
Vol 34 (8) ◽  
pp. 904-911 ◽  
Author(s):  
Wenjun CHEN ◽  
◽  
Zhimin XUE ◽  
Jinfang WANG ◽  
Jingyun JIANG ◽  
...  

Author(s):  
Xiangwei Liu ◽  
Qian Ao ◽  
Shengyou Shi ◽  
Shuie Li

Abstract The existing CO2 absorption by deep eutectic solvents is limited by the unavoidable water absorption problem during use. In this study, we prepared three deep eutectic solvents with different alcohol aminations and added different water contents to discuss the effect of water content on the absorption of carbon dioxide by deep eutectic solvents. All deep eutectic solvents have a low melting point at room temperature as a liquid and have high thermal stability, where the choline chloride-diethanolamine deep eutectic solvents have a high viscosity. Anhydrous choline chloride-monoethanolamine deep eutectic solvents have the largest CO2 absorption, reaching 0.2715 g/g, and the absorption of CO2 by anhydrous choline chloride-N-methyldiethanolamine deep eutectic solvents is only 0.0611 g/g. Water content inhibited the absorption of CO2 in primary amine and secondary amine systems, whereas it enhanced the absorption of CO2 in tertiary amine systems, which was related to the reaction process of deep eutectic solvent and CO2.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

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