Effects of nitrogen ion implantation and implantation energy on surface properties and adhesion strength of TiN films deposited on aluminum by magnetron sputtering

To improve medical pure magnesium corrosion and wear resistance, the advanced plasma implantation technology were used to implanted medical pure magnesium with nitrogen ions under certain conditions, obtaining a certain depth of nitrogen ion implantation layer, and to study the surface properties of the implantation layer. The sample after ion implanted, the surface morphology, phase composition were analyzed, and have electro chemical corrosion tests, friction and wear tests, the results showed that: pure magnesium by nitrogen ion implantation, can be obtained a surface organizations which whole flat, compact, no surface cracks and holes; the surface implantation layer mainly composed of Mg and MgO, also found a small amount of Mg3N2, which is also the main reason for corrosion and wear resistance improved; compared to pure magnesium base, nitrogen ion implantation (process conditions: implantation energy: 40KeV, implantation dose: 3×1017ions/cm2, control temperature: 200°C) improved the corrosion resistance of the sample, but not obvious, about 1.2%; however, the friction coefficient decreased significantly, approximately 61%, the amount of wear also reduced significantly, about 74%, this means that, its wear resistance has been improved significantly. This study provides a reference to improve the surface properties of pure magnesium and be learned to develop a more reasonable parameters for further study of medical pure magnesium by ion implantation of nitrogen.

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Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

10.1063/1.4943474 ◽

2016 ◽

Cited By ~ 2

Author(s):

Viktor Malau ◽

Mochammad Noer Ilman ◽

Priyo Tri Iswanto ◽

Gaguk Jatisukamto

Keyword(s):

Stainless Steel ◽

Ion Implantation ◽

Magnetron Sputtering ◽

Martensitic Stainless Steel ◽

Dc Magnetron Sputtering ◽

Implantation Time ◽

Nitrogen Ion Implantation ◽

Nitrogen Ion

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Nitrogen ion implantation for improvement of the mechanical surface properties of aluminum

Vacuum ◽

10.1016/j.vacuum.2007.01.072 ◽

2007 ◽

Vol 81 (10) ◽

pp. 1154-1158 ◽

Cited By ~ 20

Author(s):

P. Budzynski ◽

A.A. Youssef ◽

Z. Surowiec ◽

R. Paluch

Keyword(s):

Ion Implantation ◽

Surface Properties ◽

Nitrogen Ion Implantation ◽

Nitrogen Ion ◽

Mechanical Surface

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Effect of Nitrogen Ion Implantation Energy on the Mechanical and Chemical Properties of AISI M50 Steel

International Journal of Chemical Engineering ◽

10.1155/2021/4630661 ◽

2021 ◽

Vol 2021 ◽

pp. 1-8

Author(s):

Xiangyu Xie ◽

Chao Chen ◽

Jun Luo ◽

Jin Xu

Keyword(s):

Ion Implantation ◽

Chemical Properties ◽

Metal Vapor ◽

Vacuum Arc ◽

Implantation Energy ◽

Nitrogen Ion Implantation ◽

Nitrogen Ions ◽

Nitrogen Ion ◽

And Chemical Properties ◽

M50 Steel

Nitrogen ion implantation has shown its role in enhancing steel surface properties. In this work, AISI M50 steel was implanted with nitrogen ions by using the metal vapor vacuum arc technique with a dose of 2 × 1017 cm−2, and corresponding implanted energies were at 60 keV, 80 keV, and 100 keV, respectively. The distribution of implanted nitrogen ions was calculated, and the samples were tribologically tested and examined. As shown by the results, the microhardness in implanted samples was 1.17 times greater relative to that of the unimplanted sample. The implantation of the nitrogen ion leads to a change in the friction coefficient of the AISI M50 steel. Adhesive wear mechanism occurs in the unimplanted sample, and adhesion resistance tends to increase when nitrogen-implanted energy increases. The formation of oxides α-Fe2O3 and Fe3O4 further enhanced the tribological properties for implanted samples.

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Assessment of CpTi Surface Properties after Nitrogen Ion Implantation with Various Doses and Energies

Metallurgical and Materials Transactions A ◽

10.1007/s11661-012-1113-9 ◽

2012 ◽

Vol 43 (11) ◽

pp. 4185-4193 ◽

Cited By ~ 3

Author(s):

Mohamad Ali Fulazzaky ◽

Nurdin Ali ◽

Haryanti Samekto ◽

Mohd Imran Ghazali

Keyword(s):

Ion Implantation ◽

Surface Properties ◽

Nitrogen Ion Implantation ◽

Nitrogen Ion

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Influence of Nitrogen Ion-Implantation Energy on the Wear Resistance of Silicon Nitride Ceramics with Different Microstructures

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.56.947 ◽

2005 ◽

Vol 56 (12) ◽

pp. 947-950

Author(s):

Naoki NAKAMURA ◽

Kiyoshi HIRAO ◽

Yukihiko YAMAUCHI

Keyword(s):

Wear Resistance ◽

Silicon Nitride ◽

Ion Implantation ◽

Implantation Energy ◽

Nitrogen Ion Implantation ◽

Nitride Ceramics ◽

Nitrogen Ion

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Effect of Low-Energy Nitrogen Ion Implantation on Friction and Wear Properties of Ion-Plated TiC Coating

Coatings ◽

10.3390/coatings11070775 ◽

2021 ◽

Vol 11 (7) ◽

pp. 775

Author(s):

Zhongyu Dou ◽

Yinglu Guo ◽

Faguang Zhang ◽

Dianxi Zhang

Keyword(s):

Wear Resistance ◽

Ion Implantation ◽

Implantation Dose ◽

Low Energy ◽

Wear Properties ◽

Implantation Energy ◽

Nitrogen Ion Implantation ◽

Friction Performance ◽

Nitrogen Ion ◽

Tribological Analysis

To further improve the performance of the coated tools, we investigated the effects of low-energy nitrogen ion implantation on surface structure and wear resistance for TiC coatings deposited by ion plating. In this experiment, an implantation energy of 40 keV and a dose of 2 × 1017 to 1 × 1018 (ions/cm2) were used to implant N ions into the TiC coatings. The results indicate that the surface roughness of the coating increases first and then decreases with the increase of ion implantation dose. After ion implantation, the surface of the coating will soften and reduce the hardness, and the production of TiN phase will gradually increase the hardness. Nitrogen ion implantation can reduce the friction coefficient of the TiC coating and improve the friction performance. In terms of wear resistance, the coating with an implant dose of 1×1018 ions/cm2 has the greatest improvement in wear resistance. Tribological analysis shows that the improvement in the performance of TiC coatings implanted with N ions is mainly due to the effect of the lubricating implanted layer. The implanted layer mainly exists in the form of amorphous TiC, TiN phase, and sp2C–C phase.

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A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

Membranes ◽

10.3390/membranes11110899 ◽

2021 ◽

Vol 11 (11) ◽

pp. 899

Author(s):

Gene Sheu ◽

Yu-Lin Song ◽

Dupati Susmitha ◽

Kutagulla Issac ◽

Ramyasri Mogarala

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Computer Aided Design ◽

Drain Current ◽

Current Gain ◽

Implantation Technique ◽

Positive Temperature ◽

Implantation Energy ◽

Nitrogen Ion Implantation ◽

Nitrogen Ion

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. In addition, the threshold voltage (Vth) was adjusted by altering the nitrogen ion implantation dose. The normally off AlGaN/GaN device exhibited a breakdown voltage of 127.4 V at room temperature because of impact ionization, which showed a positive temperature coefficient of 3 × 10−3 K−1. In this study, the normally off AlGaN/GaN device exhibited an average drain current gain of 45.3%, which was confirmed through an analysis of transfer characteristics by changing the gate-to-source ramping. Accordingly, the proposed technique enabled the successful simulation of a 100-µm-wide device that can generate a saturation drain current of 1.4 A/mm at a gate-to-source voltage of 4 V, with a mobility of 1487 cm2V−1s−1. The advantages of the proposed technique are summarized herein in terms of processing and performance.

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