Corrosion resistance of TiN/TiAlN-coated ADI by cathodic arc deposition

2006 ◽  
Vol 421 (1-2) ◽  
pp. 182-190 ◽  
Author(s):  
Cheng-Hsun Hsu ◽  
Ming-Li Chen ◽  
Kuei-Laing Lai
2013 ◽  
Vol 284-287 ◽  
pp. 183-187 ◽  
Author(s):  
Wei Yu Ho ◽  
Cheng Hsun Hsu ◽  
Zhong Shen Yang ◽  
Li Wei Shen ◽  
Woei Yun Ho

This study utilized the reaction of O2/N2gases and Al0.67Ti0.33/Cr (99.9%) dual targets to synthesize (Ti,Al)ON/CrON multilayered coatings on AISI M2 steel by cathodic arc deposition system. Thermal stability and corrosion resistance of the multilayered coatings for aluminum die casting applications, along with coating structure were investigated. The results showed that the structure of multilayered coatings was a B1 NaCl type. The formation of oxide phases by introducing oxygen to react with Al, Cr, and Ti elements was confirmed by XPS. The thermal stability of oxygen-doped AlTiN/CrN coatings was higher than that of one without oxygen. After the immersion tests in Al-alloy melt, the oxygen-doped AlTiN/CrN coatings deposited at the O2/N2ratio value of 0.3 had the best improvement on the corrosion resistance among all the coated specimens.


2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.


2011 ◽  
Vol 206 (6) ◽  
pp. 1454-1460 ◽  
Author(s):  
M. Pohler ◽  
R. Franz ◽  
J. Ramm ◽  
P. Polcik ◽  
C. Mitterer

Author(s):  
Dimitrios Peroulis ◽  
Prashant R. Waghmare ◽  
Sushanta K. Mitra ◽  
Supone Manakasettharn ◽  
J. Ashley Taylor ◽  
...  

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