Effect of twin boundaries on nanovoid growth based on dislocation emission

2013 ◽  
Vol 582 ◽  
pp. 29-35 ◽  
Author(s):  
Shu Zhang ◽  
Jianqiu Zhou ◽  
Lu Wang ◽  
Ying Wang ◽  
Shuhong Dong
Keyword(s):  
Dislocation Emission ◽  
Twin Boundaries ◽  
Nanovoid Growth

Micromechanics Model for Nanovoid Growth in Nanocrystalline Materials

2013 ◽  
Vol 364 ◽  
pp. 754-759 ◽  
Author(s):  
Jian Qiu Zhou ◽  
Lu Wang ◽  
Zhi Xiong Ye
Keyword(s):  
Grain Size ◽  
Theoretical Model ◽  
Stress Field ◽  
Grain Boundary ◽  
Surface Stress ◽  
Nanocrystalline Materials ◽  
Critical Stress ◽  
Dislocation Emission ◽  
Nanovoid Growth ◽  
Remote Stress

A theoretical model to describe the nanovoid growth by emission dislocation shear loop in nanocrystalline metal under equal biaxial remote stress was developed. The critical stress for emission of dislocation was derived by considering the effects of surface stress. Within our description, dislocations emitted from surface of nanovoid were piled up at grain boundaries and the stress field generated by arrested dislocations can prevent further dislocation emission. The effect of grain boundary of nanocrystalline materials on nanovoid growth was investigated, and the results showed that the smaller of the grain size, the harder for the nanovoid growth.

Dynamical dislocation emission processes from twin boundaries

2008 ◽  
Vol 93 (4) ◽  
pp. 041906 ◽  
Author(s):  
Y. B. Wang ◽  
B. Wu ◽  
M. L. Sui
Keyword(s):  
Dislocation Emission ◽  
Twin Boundaries

scholarly journals Quantitative insights into the dislocation source behavior of twin boundaries suggest a new dislocation source mechanism

2021 ◽  
Author(s):  
Juan Li ◽  
G. M. Pharr ◽  
C. Kirchlechner
Keyword(s):  
High Strength ◽  
Dislocation Emission ◽  
Twin Boundaries ◽  
Dislocation Source ◽  
Perfect Lattice ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Bulk Single Crystals ◽  
Dislocation Sources ◽  
Microscopy Images

AbstractPop-in statistics from nanoindentation with spherical indenters are used to determine the stress required to activate dislocation sources in twin boundaries (TBs) in copper and its alloys. The TB source activation stress is smaller than that needed for bulk single crystals, irrespective of the indenter size, dislocation density and stacking fault energy. Because an array of pre-existing Frank partial dislocations is present at a TB, we propose that dislocation emission from the TB occurs by the Frank partials splitting into Shockley partials moving along the TB plane and perfect lattice dislocations, both of which are mobile. The proposed mechanism is supported by recent high resolution transmission electron microscopy images in deformed nanotwinned (NT) metals and may help to explain some of the superior properties of nanotwinned metals (e.g. high strength and good ductility), as well as the process of detwinning by the collective formation and motion of Shockley partial dislocations along TBs. Graphic abstract

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

Carbide precipitation and chromium depletion on coherent twin boundaries in deformed 304 stainless steels

1992 ◽  
Vol 50 (2) ◽  
pp. 1216-1217
Author(s):  
A.H. Advani ◽  
L.E. Murr ◽  
D.J. Matlock ◽  
W.W. Fisher ◽  
P.M. Tarin ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Stainless Steels ◽  
Interfacial Free Energy ◽  
Carbide Precipitation ◽  
Twin Boundaries ◽  
Invariant Structure ◽  
Heat Treated ◽  
Constant Structure ◽  
Cr Depletion

Coherent annealing-twin boundaries are constant structure and energy interfaces with an average interfacial free energy of ∼19mJ/m2 versus ∼210 and ∼835mJ/m2 for incoherent twins and “regular” grain boundaries respectively in 304 stainless steels (SS). Due to their low energy, coherent twins form carbides about a factor of 100 slower than grain boundaries, and limited work has also shown differences in Cr-depletion (sensitization) between twin versus grain boundaries. Plastic deformation, may, however, alter the kinetics and thermodynamics of twin-sensitization which is not well understood. The objective of this work was to understand the mechanisms of carbide precipitation and Cr-depletion on coherent twin boundaries in deformed SS. The research is directed toward using this invariant structure and energy interface to understand and model the role of interfacial characteristics on deformation-induced sensitization in SS. Carbides and Cr-depletion were examined on a 20%-strain, 0.051%C-304SS, heat treated to 625°C-4.5h, as described elsewhere.

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