A comparison of the optical properties of amorphous and polycrystalline PZT thin films deposited by the sol–gel method

2006 ◽  
Vol 127 (2-3) ◽  
pp. 117-122 ◽  
Author(s):  
Shenghong Yang ◽  
Yueli Zhang ◽  
Dang Mo
2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2011 ◽  
Vol 11 (5) ◽  
pp. 1243-1248 ◽  
Author(s):  
K.J. Chen ◽  
F.Y. Hung ◽  
S.J. Chang ◽  
S.J. Young ◽  
Z.S. Hu

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.


2008 ◽  
Vol 517 (3) ◽  
pp. 1032-1036 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Hua-Chi Cheng ◽  
Yen-Ting Tung ◽  
Wei-Hsing Tuan ◽  
Chung-Kwei Lin

1992 ◽  
Vol 1 (2-4) ◽  
pp. 293-304 ◽  
Author(s):  
H. Watanabe ◽  
T. Mihara ◽  
C. A. Paz De Araujo

Ionics ◽  
2010 ◽  
Vol 16 (9) ◽  
pp. 815-820 ◽  
Author(s):  
Yidong Zhang ◽  
Wenjun Fa ◽  
Fengling Yang ◽  
Zhi Zheng ◽  
Pingyu Zhang

2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


2011 ◽  
Vol 44 (3) ◽  
pp. 550-554 ◽  
Author(s):  
Jianjun Tian ◽  
Hongmei Deng ◽  
Lin Sun ◽  
Hui Kong ◽  
Pingxiong Yang ◽  
...  

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