Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$  N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Cited By ~ 16

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Cited By ~ 12

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Cited By ~ 48

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

10.1063/1.3330929 ◽

2010 ◽

Vol 96 (8) ◽

pp. 082905 ◽

Cited By ~ 12

Author(s):

W. J. Maeng ◽

Woo-Hee Kim ◽

Ja Hoon Koo ◽

S. J. Lim ◽

Chang-Soo Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Control ◽

Oxide Semiconductor ◽

Tio2 Layer ◽

Metal Gate ◽

Effect Transistor ◽

Flatband Voltage

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.124202 ◽

2010 ◽

Vol 49 (12) ◽

pp. 124202 ◽

Cited By ~ 6

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Ru Han

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Threshold Model ◽

Oxide Semiconductor ◽

Gate Stack ◽

Surrounding Gate ◽

Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.6226 ◽

1999 ◽

Vol 38 (Part 1, No. 11) ◽

pp. 6226-6231 ◽

Cited By ~ 69

Author(s):

Wataru Saitoh ◽

Atsushi Itoh ◽

Shigeharu Yamagami ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Metal Gate ◽

Short Channel ◽

Effect Transistor ◽

Insulator Substrate