Deposition of Heterogeneous Silicon Thin Films-Structure and Electric States-

2000 ◽  
Vol 609 ◽  
Author(s):  
Isamu Shimizu

ABSTRACTHeterogeneous silicon thin films exhibited various microstructures were prepared by plasma enhanced(PE)-CVD from gaseous mixture of SiF4+H2 (SiH4) on glass substrate. Efficient parameters for controlling the microstructures were reviewed together with the way to grow crystalline seeds on glass by repeating the deposition and etching. Two step growth where polycrystalline silicon thin films were epitaxially grown on the seeds made on glass was proposed to accelerated the growth rate. The relationship between the microstructure and the carrier-transport properties are addressed, as well.

1992 ◽  
Vol 54 ◽  
pp. 35-40 ◽  
Author(s):  
M. Elliq ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
J.P. Stoquert ◽  
S. de Unamuno ◽  
...  

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Ichikawa ◽  
J. Takeshita ◽  
A. Yamada ◽  
M. Konagai

AbstractA new process, the Hot Wire Cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low temperature and high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reacting with a heated tungsten filament placed near to a substrate and polycrystalline silicon films can be deposited at a growth rate of 1.2nm/s without hydrogen dilution and 0.9nm/s with the use hydrogen dilution. The film crystallinity changed from amorphous to polycrystalline due to the addition of hydrogen, thus hydrogen dilution was effective for improving film crystallinity. Furthermore, we obtained (220) oriented polycrystalline silicon thin films with a 90% crystal fraction by the use of hydrogen dilution. These results showed that the Hot Wire Cell method is promising for the deposition of device-grade polycrystalline silicon films for photovoltaic applications.


2002 ◽  
Vol 17 (9) ◽  
pp. 2235-2242 ◽  
Author(s):  
G. G. Dougherty ◽  
A. A. Pisano ◽  
T. Sands

It is known that thin films of polycrystalline silicon, deposited under the right conditions, can be permeable to HF-based etching solutions. While these films offer unique capabilities for microfabrication, both the poor reproducibility of the permeable film properties and the lack of a detailed physical understanding of the material have limited their application. This work provides a methodical study of the relationship between process, microstructure, and properties of permeable polycrystalline silicon thin films. It is shown that the permeability is a result of small pores, on the order of 10 nm, between the 100–200-nm hemispherical grains characteristic of the permeable film morphology. This morphology occurs only in nearly stress-free films grown in a narrow temperature range corresponding to the transition between tensile and compressive film growth regimes. This result strongly suggests that the monitoring of residual film stress can provide the process control needed to reliably produce permeable films. A simple kinetic model is proposed to explain the evolution of the morphology of the permeable films.


Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 151-154 ◽  
Author(s):  
D. Dimova-Malinovska ◽  
O. Angelov ◽  
M. Sendova-Vassileva ◽  
M. Kamenova ◽  
J.C. Pivin ◽  
...  

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