ChemInform Abstract: Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films

ChemInform ◽  
1989 ◽  
Vol 20 (28) ◽  
Author(s):  
J. D. CRESSLER ◽  
W. HWANG ◽  
T.-C. CHEN
2000 ◽  
Vol 609 ◽  
Author(s):  
Isamu Shimizu

ABSTRACTHeterogeneous silicon thin films exhibited various microstructures were prepared by plasma enhanced(PE)-CVD from gaseous mixture of SiF4+H2 (SiH4) on glass substrate. Efficient parameters for controlling the microstructures were reviewed together with the way to grow crystalline seeds on glass by repeating the deposition and etching. Two step growth where polycrystalline silicon thin films were epitaxially grown on the seeds made on glass was proposed to accelerated the growth rate. The relationship between the microstructure and the carrier-transport properties are addressed, as well.


2013 ◽  
Vol 178 (9) ◽  
pp. 568-573
Author(s):  
Steve Reynolds ◽  
Rudi Brüggemann ◽  
Björn Grootoonk ◽  
Vlad Smirnov

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4254-4257 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Kentaro Ozaki ◽  
Keiko Saitoh

Sign in / Sign up

Export Citation Format

Share Document