Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric

2006 ◽  
Vol 9 (6) ◽  
pp. 969-974 ◽  
Author(s):  
M. Ťapajna ◽  
K. Hušeková ◽  
J.P. Espinos ◽  
L. Harmatha ◽  
K. Fröhlich
Keyword(s):  
Work Function ◽  
Precise Determination ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Effective Work ◽  
Effective Work Function

A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics

2006 ◽  
Vol 917 ◽  
Author(s):  
Rashmi Jha ◽  
Jiyoung Chung ◽  
Bei Chen ◽  
Robert Nemanich ◽  
Veena Misra
Keyword(s):  
Work Function ◽  
Oxygen Content ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Electrical Measurements ◽  
Mos Capacitors ◽  
Effective Work ◽  
Effective Work Function ◽  
Surface Work ◽  
Surface Work Function

AbstractIn this work we have performed Ultraviolet Photoelectron Spectroscopy (UPS) and X-Ray Photoelectron Spectroscopy (XPS) on: (i) 40Å of Ru deposited on 20Å of ALD-HfO2 (Ru-HfO2), (ii) 40Å of Re deposited on 20Å of ALD-HfO2 (Re-HfO2), and (iii) 40Å of W deposited on 20Å of ALD-HfO2 (W-HfO2) in as deposited as well as after 600˚C in-situ anneal exposure. The samples with Ru and Re indicated significant reduction in the oxygen content and shift in the Hf peaks towards higher binding energy after anneal as compared to the as deposited state. The loss of oxygen after anneal was associated with the reduction in the surface work function of Ru and Re measured by UPS. However, the sample with W showed a redistribution of oxygen after anneal leading to the formation of multiple oxides of W having a net higher surface work function. The spectroscopic measurements were correlated with the electrical measurements made on MOS capacitors with Ru metal gates on HfO2 gate dielectric. The results indicated that the oxygen content at metal/high-k interface plays an important role in governing the effective work function of Ru on HfO2 gate dielectric.

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks

2021 ◽  
Vol 39 (4) ◽  
pp. 043201
Author(s):  
Ekaterina Zoubenko ◽  
Sara Iacopetti ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Patrick Van Cleemput ◽  
...  
Keyword(s):  
Work Function ◽  
Chemical Bonding ◽  
Gate Stacks ◽  
Effective Work ◽  
Effective Work Function
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